Amorf Yarıiletken InTe İnce Filminin Üretilmesi ve Karakterizasyonu

Yıl 2019, Cilt: 7 Sayı: 2, 245 - 254, 25.05.2019

Handan Aydin Fahrettin Yakuphanoglu Cihat Aydın

https://doi.org/10.21541/apjes.442306

Öz

Bu çalışmada, InTe amorf yarıiletken malzemenin, X ışını difraksiyonu, elektriksel iletkenliği, optik ve dielektrik özellikleri
araştırıldı. X-ışını difraksiyon sonuçları InTe numunesinin amorf yapıya sahip olduğunu gösterir. Numunenin elektriksel
iletkenliğinin sıcaklığa bağlılığı araştırıldı ve bulunan sonuçlar numunenin bir amorf yarıiletken olduğunu doğrular. InTe
numunesi fotoiletkenlik özellik gösterir. Numunenin optik band aralığı ve optik sabitleri geçirgenlik ve yansıma spektrumları
kullanılarak hesaplandı. Numunede doğrudan optik geçişler meydana geldi. Numunenin kırılma indisi dispersiyon eğrisi tek
osilatör modeline uydu. Numunenin dielektrik özellikleri frekansın ve sıcaklığın bir fonsiyonu olarak araştırıldı. Dielektrik
parametrelerin sıcaklık ve frekansla değiştiği bulundu. Elektrik modulus eğrileri dielektrik relaksasyon olayını analiz etmek için
kullanıldı.

Anahtar Kelimeler

InTe, Elektriksel İletkenlik, Amorf Yarıiletken, Dielektrik Sabiti

Fabrication and Characterization of Amorphous Semiconductor InTe Thin Film

Öz

In this study, X-ray diffraction, electrical conductivity, optical and dielectrical properties of the InTe amorphous semiconductor
material have been investigated. X-ray diffraction results show that InTe sample has an amorphous structure. Temperature
dependence of electrical conductivity of the sample has been investigated and the obtained results confirm that InTe is an
amorphous semiconductor. The InTe sample shows photoconductivity behavior. The optical band gap and optical constants of
the sample were calculated using transmittance and reflectance spectra. In the sample, the direct optical transitions take place
The refractive index dispersion curve of the sample obeys the single oscillator model. The dielectrical properties of the sample
have been investigated as a function of frequency and temperature. It was found that the dielectrical parameters were changed
with temperature and frequency. The electrical modulus curves were used to analyze the dielectrical relaxation processes.

Anahtar Kelimeler

: InTe, Electrical Conductivity, Amorphous Semiconductour, Dielectric constant

Kaynakça

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