Conduction Mechanisms in Organic-based Rectifying Diode

Yıl 2016, Cilt: 17 Sayı: 4, 717 - 723, 01.12.2016

Çiğdem Oruç Arden Erkol Ahmet Altındal

https://doi.org/10.18038/aubtda.267118

Öz

The temperature dependent
current–voltage characteristics of Ag/ZnPc/p-Si Schottky barrier (SB) diode are
investigated in the temperature range of 300–450 K, and in the bias range of ± 1 V. By fitting the
experimental data to space-charge limited conduction, bulk-limited Poole–Frenkel emission and
thermo-ionic emission theory, it was observed that these models can not be applied to evaluate
junction parameters for the investigated SB diode. Preliminary results
indicated that the charge transport proceeds
by different mechanism for low and high values of the applied voltage under forward and reverse bias conditions. It
was found that the charge transport is governed by hopping processes for low
values of the forward bias. However, for higher values of the forward bias, the
charge transport controlled by the bulk limited procesess. The same voltage
dependence was also observed for reverse bias conditions. 

Anahtar Kelimeler

Schottky diode, transport mechanism

Kaynakça

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