Sn/p-Si Schottky Kontaklarda Elektriksel Karakteristiklerin Belirlenmesinde Frekans Optimizasyonu

Yıl 2018, Cilt: 23 Sayı: 1, 48 - 59, 27.04.2018

Reşit Özmenteş Cabir Temirci

Öz

Sn/p-Si Schottky kontakları üretildi. Numunelerin Akım-Voltaj (I-V), Kapasitans-Voltaj (C-V) ve Kapasitans-frekans (C-f) ölçümleri karanlıkta ve oda sıcaklığında alındı. Numunelerin idealite faktörleri (n) ve engel yükseklikleri (Φb) doğru beslem akım-voltaj (I-V) karakteristiklerinden ve ayrıca sonuçların uyumluluğunu kontrol etmek için Cheung Fonksiyonlarından hesaplandı. Numunelerin seri dirençleri (Rs) Cheung Fonksiyonlarından belirlendi. Diyot A’nın 100 kHz-20 MHz frekans aralığında C-V karakteristiklerinden difüzyon potansiyelini hesaplayarak, difüzyon potansiyeli-frekans değişimi gözlendi. İlave olarak, aynı numunenin 1 MHz, 5 MHz, 10 MHz, 15 MHz ve 20 MHz frekans değerlerinde C-V karakteristikleri kullanılarak engel yükseklikleri hesaplandı. Ölçümler ve hesaplamalar neticesinde, numunelerin engel yüksekliklerinin 1 MHz’den 5 MHz’e kadar çok az arttığı, ancak 5 MHz’den 20 MHz’e kadar sürekli olarak düştüğü tespit edildi. Elde edilen verilerden, üretilen Schottky diyotların engel yüksekliğini belirlemede C-V ölçümleri uygun bir frekansta alınırsa, C-V ve I-V verilerinden elde edilen engel yüksekliği değerlerinin, birbirleri ile iyi bir uyum içinde olacağı görüldü

Anahtar Kelimeler

Metal-Yarıiletken kontak, Schottky kontak, İdealite faktörü

Kaynakça

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