Year 2018, Volume 19, Issue 1, Pages 24 - 31 2018-03-31

Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers

Serdar Delice [1]

285 448

Thermoluminescence study on nitrogen doped Tl2Ga2S3Se single crystals was achieved by performing the experiments with different stopping temperatures of 10−24 K and various heating rates between 0.4 and 1.2 K/s below room temperature. Thermoluminescence peak with peak maximum temperature of 54 K was detected from the emitted luminescence. Two trap levels were obtained from the observed spectra. Curve fitting and initial rise methods were applied to compute the activation energies and the values of 34 and 70 meV were found. Thermal cleaning process was applied to separate the overlapping peaks and so true energy region of trapping levels was corroborated. Moreover, variation of shape and position of TL curve were studied by investigating the heating rate behavior of trap levels. The best known behavior which the peak maximum temperature increases while the thermoluminescence intensity decreases with raising heating rate was observed. The effect of the N doping on the existed defects was discussed.

Thermoluminescence, defects, N doping
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Subjects Engineering
Journal Section Articles
Authors

Author: Serdar Delice
Country: Turkey


Dates

Publication Date: March 31, 2018

Bibtex @research article { aubtda332583, journal = {ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering}, issn = {1302-3160}, eissn = {2146-0205}, address = {Eskişehir Teknik Üniversitesi}, year = {2018}, volume = {19}, pages = {24 - 31}, doi = {10.18038/aubtda.332583}, title = {Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers}, key = {cite}, author = {Delice, Serdar} }
APA Delice, S . (2018). Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers. ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering, 19 (1), 24-31. DOI: 10.18038/aubtda.332583
MLA Delice, S . "Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers". ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering 19 (2018): 24-31 <http://dergipark.org.tr/aubtda/issue/36292/332583>
Chicago Delice, S . "Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers". ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering 19 (2018): 24-31
RIS TY - JOUR T1 - Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers AU - Serdar Delice Y1 - 2018 PY - 2018 N1 - doi: 10.18038/aubtda.332583 DO - 10.18038/aubtda.332583 T2 - ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering JF - Journal JO - JOR SP - 24 EP - 31 VL - 19 IS - 1 SN - 1302-3160-2146-0205 M3 - doi: 10.18038/aubtda.332583 UR - https://doi.org/10.18038/aubtda.332583 Y2 - 2017 ER -
EndNote %0 ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers %A Serdar Delice %T Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers %D 2018 %J ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering %P 1302-3160-2146-0205 %V 19 %N 1 %R doi: 10.18038/aubtda.332583 %U 10.18038/aubtda.332583
ISNAD Delice, Serdar . "Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers". ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering 19 / 1 (March 2018): 24-31. https://doi.org/10.18038/aubtda.332583
AMA Delice S . Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers. AUJST-A. 2018; 19(1): 24-31.
Vancouver Delice S . Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers. ANADOLU UNIVERSITY JOURNAL OF SCIENCE AND TECHNOLOGY A - Applied Sciences and Engineering. 2018; 19(1): 31-24.