Çift GaAlAs/GaAs ve GaInAs/GaAs kuantum kuyularının kuyu genişliğine bağlı olarak elektronik özellikleri

Yıl 2019, Cilt: 40 Sayı: 2, 471 - 476, 30.06.2019

Ozan Ozturk Emine Ozturk Sezai Elagoz

https://doi.org/10.17776/csj.520766

Cited By: 1

Öz

Bu çalışmada, çift Ga_1-x Al_x As/GaAs kuantum kuyularının (A yapısı) ve Ga_1-x In_x As/GaAs /GaAs kuantum kuyularının (B yapısı) elektronik
özellikleri kuyu genişliğine bağlı olarak incelenmiştir. Etkin kütle yaklaşımı
kullanılarak, Schrödinger denkleminin çözümüyle enerji seviyeleri, dalga
fonksiyonları ve bu sistemin olasılık yoğunlukları hesaplanmıştır. Elde edilen
sonuçlara göre, A ve B yapısının temel farklılıkları yasak enerji aralığı ve
etkili kütledir. A yapısı için engel GaAlAs ve kuyu GaAs’dır. B yapısı için ise
engel GaAs ve kuyu GaInAs’dır. Ayrıca, A yapısının potansiyel yüksekliği ve
enerji seviyeleri her zaman B yapısından düşüktür. Kuyu genişliği, çift kuantum
kuyusunun (DQW) elektronik özellikleri üzerinde büyük bir etkiye sahiptir. Bu
özellikler, ayarlanabilir yarı iletken cihazların tasarımı için pratik bir
ilgiye sahiptir.

Anahtar Kelimeler

Çift GaAlAs/GaAs kuantum kuyusu, Çift GaInAs/GaAs kuantum kuyusu, Kuyu genişliği, elektronik özellikler

Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

Öz

Herein, the electronic properties of double Ga_1-x Al_x As/GaAs quantum wells (A model) and
Ga_1-x In_x As/GaAs quantum wells (B model) have
been examined related to the well width. The wave functions, the subband
energies and the probability densities of these systems under effective mass
approach were determined by the solution of Schrödinger equation. According to
the results obtained, the major diversities of A and B models are the effective
mass and the energy gap. For A model, GaAlAs is the barrier and GaAs is the
well. Whereas for B model, GaAs is the barrier and GaInAs is the well. Also,
the potential depth and the energy levels of A model are continuously smaller
than of B model. The well width has a great impact on the electronic features
of the double quantum well (DQW). These features have a convenient attention
for the purpose of adjustable semiconductor devices.

Anahtar Kelimeler

Double GaAlAs/GaAs quantum well, double GaInAs/GaAs quantum well, well width, electronic properties

Kaynakça

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