@article{article_1018762, title={ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE}, journal={Sigma Journal of Engineering and Natural Sciences}, volume={34}, pages={255–259}, year={2016}, author={Bozkurt, Kutsal}, keywords={EL, quantum dashes, and annihilation.}, abstract={MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements. Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.}, number={2}, publisher={Yildiz Technical University}