@article{article_1050430, title={The Effect Of Cu Doping On The Structural Properties And Electrical Resistivity Of MAPbI3 Perovskite Thin Films}, journal={International Journal of Engineering Research and Development}, volume={14}, pages={544–551}, year={2022}, DOI={10.29137/umagd.1050430}, author={Korkmaz, Satiye}, keywords={Perovskite thin film, methylamine lead iodide, electrical resistivity.}, abstract={Perovskite thin films have good power conversion efficiency because they have high carrier mobility and a long carrier lifetime. As a result of the research, the yield of perovskite materials has recently reached a maximum efficiency of 31% in the laboratory environment. To investigate the effects of doping on perovskite thin films’ structural, surface, and electrical resistivity, structural properties of undoped and 10% Cu-doped perovskite thin films were characterized with XRD, FESEM, EDX, and AFM. Their electrical measurements are carried out using four-point probe method. The resistivity of undoped and 10% Cu-doped perovskite thin films decreased asymptotically with voltage increase.}, number={2}, publisher={Kirikkale University}