@article{article_116709, title={A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS}, journal={IU-Journal of Electrical & Electronics Engineering}, volume={1}, pages={201–208}, year={2011}, author={Kacar, Fırat and Kuntman, Ayten and Kuntman, Hakan}, abstract={<div>Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability </div> <div>concept in modern microcircuits. High energy carriers also called hot carriers are generated in the </div> <div>MOSFET by the large channel electric field near the drain region. The electric field accelarates the </div> <div>carriers to effective temperatures well above the lattice temprature. These hot carriers transfer energy </div> <div>to the lattice through phonon emission and break bonds at the Si/SiO2 interface. The trapping or bond </div> <div>breaking creates oxide charge and interface traps that effect the channel carrier mobility and the </div> <div>effective channel potential. </div> <div>Interface traps and oxide charge effect transistor performance parameters such as threshold voltage </div> <div>and drive currents in all operating regimes. In this paper, the influence of the hot carriers on the </div> <div>threshold voltage of MOS trasnsistors is examined experimentally. Using these experimental results a </div> <div>new method for representation of hot-carrier effect on the threshold voltage of MOS transistors is </div> <div>proposed. </div> <div>Key words: MOS transistor, Hot carriers, MOS models </div>}, number={2}, publisher={İstanbul University-Cerrahpasa}