@article{article_1207057, title={Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device}, journal={Gazi University Journal of Science Part A: Engineering and Innovation}, volume={10}, pages={89–96}, year={2023}, DOI={10.54287/gujsa.1207057}, author={Ata, Dilan and Balbaşı, Muzaffer and Tataroglu, Adem}, keywords={Gr Doped PVA, Illumination, Admittance, Basic Electrical Parameters}, abstract={Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state (Nss) was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.}, number={1}, publisher={Gazi University}