@article{article_1276114, title={Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure}, journal={Karadeniz Fen Bilimleri Dergisi}, volume={13}, pages={1377–1385}, year={2023}, DOI={10.31466/kfbd.1276114}, author={Bilgili, Ahmet and Akpınar, Ömer and Kaya, Naki and Öztürk, Mustafa}, keywords={GaN, HEMT, AlGaN, QMSA, Hall, Mobility}, abstract={In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.}, number={4}, publisher={Giresun University}, organization={Presidency Strategy and Budget Directorate}