TY - JOUR T1 - Metal-Polimer-Yarıiletken Yapılı Schottky Bariyer Diyotun PCPDTBT:PCBM Arayüz Katmanı Kullanılarak Üretimi ve Farklı Sıcaklık Değerlerinde Karakterizasyonu TT - Production of Metal-Polymer-Semiconductor Schottky Barrier Diode Using PCPDTBT:PCBM Interface Layer and Characterization at Different Temperature Values AU - Uz, Özgün AU - Çelik, Ömer Berkan AU - Taş, Burak AU - Şağban, Hüseyin Muzaffer AU - Tüzün Özmen, Özge PY - 2023 DA - December DO - 10.35414/akufemubid.1338812 JF - Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi PB - Afyon Kocatepe University WT - DergiPark SN - 2149-3367 SP - 1395 EP - 1401 VL - 23 IS - 6 LA - tr AB - Bu çalışmada PCPDTBT{Poli[2,6-(4,4-bis-(2-etilheksil)-4H-siklopenta[2,1-b;3,4-b']ditiyofen)-alt-4,7 (2,1,3-benzotiadiazol)]}:PCBM{[6,6]-fenil C61 bütirik asit metil ester} konsantrasyonu 2:1 katkı oranı ile hazırlanarak Schottky bariyer diyot (SBD) ara katmanı olarak kullanılmıştır. Üretilen SBD’in farklı sıcaklıklarda ve vakum altında akım-gerilim değerleri ölçülmüştür. Yapılan ölçümler sonucu elde edilen elektriksel parametreler analiz edilerek idealite faktörü, engel yüksekliği ve doyma akımı değerleri hesaplanarak farklı sıcaklık değerlerindeki karakteristik değişimleri izlenmiştir. 1,927 idealite değerine ulaşan SBD’de PCPDTBT:PCBM 2:1 oranındaki karışımın ara katman olarak kullanımının başarılı bir sonuç verdiği gözlemlenmiştir. KW - Schottky KW - Organik KW - Metal-polimer KW - Sıcaklık KW - Karakterizasyon N2 - In this study, PCPDTBT{Poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7 (2 ,1,3-benzothiadiazole]}:PCBM{[6,6]-phenyl C61 butyric acid methyl ester} concentration was prepared with a 2:1 additive ratio and used as a Schottky barrier diode (SBD) interlayer. The current-voltage values of the produced SBD were measured at different temperatures and under vacuum. By analyzing the electrical parameters obtained as a result of the measurements, the ideality factor, barrier height and saturation current values were calculated and the characteristic changes at different temperature values were monitored. It was observed that the use of a mixture of PCPDTBT:PCBM 2:1 as an interlayer in SBD, which reached an ideality value of 1,927, gave a successful result. CR - Ameri, T., Li, N., and Brabec, C. J., 2013. Highly efficient organic tandem solar cells: a follow up review. Energy & Environmental Science, 6,8, 2390-2413. CR - Boland, P., Lee, K., and Namkoong, G., 2010. Device optimization in PCPDTBT:PCBM plastic solar cells. Solar Energy Materials and Solar Cells, 94,5, 915-920. CR - Bronovets, M. A., Volodin, N. M., and Mishin, Y. N., 2020. New materials in semiconductor tensometry. Materials Letters, 267, 127467. CR - Crowell, C. R., 1965. The Richardson constant for thermionic emission in Schottky barrier diodes. Solid-State Electronics, 8, 4, 395–399. CR - Demir, G. E., 2021. Investigation on UV photoresponsivity of main electrical properties of Au/CuO-PVA/n-Si MPS type Schottky barrier diodes (SBDs). Physica B: Condensed Matter, 604, 412723. CR - Gökçen, M., Tunç, T., Altındal, Ş., and Uslu, I., 2012. The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs). Current Applied Physics, 12, 2, 525-530. CR - Hudait M. K., Vankatesvarlu, P., and Krupanidhi, S.B., 2001. Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures”, Solid-State Electron. 45, 1, 133-141. CR - Lim, L. W., Aziz, F., Muhammad, F. F., Supangat, A., and Sulaiman, K., 2016. Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode. Synthetic Metals, 221, 169-175. CR - Mustafa, A., and Abid, M. A. 2022. A review: methodologies for the synthesis of anthra [2,3-b] thiophene and naphtho [2,3-b:6,7-b'] dithiophene fragments for organic semiconductor materials. Tetrahedron Letters, 154258. CR - Özmen, Ö. T., 2014. Effects of PCBM concentration on the electrical properties of the Au/P3HT: PCBM/n-Si (MPS) Schottky barrier diodes. Microelectronics Reliability, 54, 12, 2766-2774. CR - Pu, X., and Bai, F. Q., 2023. Novel organic semiconductor materials combined by sumanene and corannulene: rational functionalization based on the electronic structures of highly curved buckybowl. Journal of Molecular Structure, 136127. CR - Rhoderick, E. H., and Williams, R. H.,1988. Metal-Semiconductor Contacts. Oxford: Clarendon press. CR - Ta, J., Sun, W., and Lu, L., 2022. Organic small molecule semiconductor materials for OFET-based biosensors. Biosensors and Bioelectronics, 114667. CR - Tecimer, H., Uslu, H., Alahmed, Z. A., Yakuphanoğlu, F., and Altındal, Ş., 2014. On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs). Composites Part B: Engineering, 57, 25-30. CR - Tromer, R. M., Machado, L. D., Woellner, C. F., and Galvao, D. S., 2021. Thiophene-Tetrathia-Annulene monolayer (TTA-2D): A new 2D semiconductor material with indirect bandgap. Physica E: Low-dimensional Systems and Nanostructures, 129, 114586. CR - Tuktarov, A. R., Chobanov, N. M., Sadretdinova, Z. R., Salikhov, R. B., Mullagaliev, I. N., Salikhov, T. R., and Dzhemilev, U. M., 2021. New n-type semiconductor material based on styryl fullerene for organic field-effect transistors. Mendeleev Communications, 31, 5, 641-643. CR - Tung R.T., 2000. omment on numerical study of electrical transport in homogeneous Schottky diodes. Journal of Applied Physics, 88, 3, 7366-7368. CR - Xia, G. M. 2019. Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries. Science Bulletin, 64, 19, 1436-1455. UR - https://doi.org/10.35414/akufemubid.1338812 L1 - https://dergipark.org.tr/en/download/article-file/3312749 ER -