@article{article_22825, title={Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors}, journal={Journal of Nuclear Sciences}, volume={2}, pages={48–52}, year={2015}, DOI={10.1501/nuclear_0000000012}, author={Kaya, Ş. and Yılmaz, E. and Çetinkaya, A.}, keywords={Radiation effects, Si3N4 MIS capacitor, Interface states, Series resistance}, abstract={<p>The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures. </p>}, number={2}, publisher={Ankara University}