TY  - JOUR
TT  - Conduction Mechanisms in Organic-based Rectifying Diode
AU  - Oruç, Çiğdem
AU  - Erkol, Arden
AU  - Altındal, Ahmet
PY  - 2016
DA  - December
DO  - 10.18038/aubtda.267118
JF  - Anadolu University Journal of Science and Technology A - Applied Sciences and Engineering
JO  - AUJST-A
PB  - Eskisehir Technical University
WT  - DergiPark
SN  - 1302-3160
SP  - 717
EP  - 723
VL  - 17
IS  - 4
KW  - Schottky diode
KW  - transport mechanism
N2  - The temperature dependentcurrent–voltage characteristics of Ag/ZnPc/p-Si Schottky barrier (SB) diode areinvestigated in the temperature range of 300–450 K, and in the bias range of ± 1 V. By fitting theexperimental data to space-charge limited conduction, bulk-limited Poole–Frenkel emission andthermo-ionic emission theory, it was observed that these models can not be applied to evaluatejunction parameters for the investigated SB diode. Preliminary resultsindicated that the charge transport proceedsby different mechanism for low and high values of the applied voltage under forward and reverse bias conditions. Itwas found that the charge transport is governed by hopping processes for lowvalues of the forward bias. However, for higher values of the forward bias, thecharge transport controlled by the bulk limited procesess. The same voltagedependence was also observed for reverse bias conditions.
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UR  - https://doi.org/10.18038/aubtda.267118
L1  - https://dergipark.org.tr/en/download/article-file/235475
ER  -