@article{article_289305, title={Structural and optical properties of Cu2SnS3 thin films obtained by SILAR method}, journal={Sakarya University Journal of Science}, volume={21}, pages={505–510}, year={2017}, DOI={10.16984/saufenbilder.289305}, author={Astam, AYKUT}, keywords={Cu2SnS3,SILAR,thin film}, abstract={<p> <span class="fontstyle0">Cu </span> <span class="fontstyle0" style="font-size:7pt;">2 </span> <span class="fontstyle0">SnS </span> <span class="fontstyle0" style="font-size:7pt;">3 </span> <span class="fontstyle0">thin films were obtained by annealing of SILAR deposited films at 350°C for 1 hour in sulphur atmosphere. <br />The structural and optical properties of the films were investigated using X-ray diffraction (XRD), scanning electron <br />microscopy (SEM), energy dispersive X-ray analysis (EDAX) and optical absorption measurements, before and after <br />annealing. The XRD results showed that the annealing process transformed the crystal structure of the films from <br />amorphous to polycrystalline. SEM images revealed that the surface morphology of films was changed after annealing <br />while EDAX analysis showed that the films were excess in copper concentration before and after annealing. Optical <br />absorption measurements confirmed that the direct band gap of films decreased from 1.27 eV to 1.21 eV with <br />annealing. </span>   <br style="line-height:normal;" /> </p>}, number={3}, publisher={Sakarya University}