TY  - JOUR
T1  - The Structural and Electronic Properties of TlGa1-xInxTe2 (x=0.00, 0.25, 0.50, 0.75) Alloys
TT  - TlGa1-xInxTe2 (x=0.00, 0.25, 0.50, 0.75) Alaşımlarının Yapısal ve Elektronik Özellikleri
AU  - Yücel, İsmail
AU  - Çakmak, Seyfettin
PY  - 2017
DA  - July
JF  - Süleyman Demirel University Faculty of Arts and Science Journal of Science
PB  - Süleyman Demirel University
WT  - DergiPark
SN  - 1306-7575
SP  - 30
EP  - 40
VL  - 12
IS  - 1
LA  - en
AB  - In this study, the structural and electronicproperties of TlGa1-xInxTe2alloys have been investigated using the full potentiallinearized augmented plane wave (FP-LAPW) method within the density functionaltheory (DFT). The TlGa1-xInxTe2 (x=0.25, 0.50,0.75) alloys have tetragonal structure as in TlInTe2 and TlGaTe2alloys. We create the crystal structure of these alloys using the P1                               space group. We found that the value of thelattice parameter a and volume of unit cell increases with increasing Inconcentrations. These alloys have characteristics of semiconductors. Moreover,we show that the band gap energy is dependent on the alloy composition index x.The calculated band gap energies indicate that all the studied alloys here arecharacterized by narrow band-gap semiconductors. The finding of this studymotivates further future studies forconcerning quaternary TlGa1-xInxTe2 forx=0.25, 0.50 and 0.75 alloys.
KW  - DFT method
KW  - Structural properties
KW  - Electronic properties.
N2  - Buçalışmada, yoğunluk fonksiyonelteorisi dahilinde lineergenişletilmiş düzlem dalga metodu kullanılarak TlGa1-xInxTe2alaşımlarının yapısal ve elektronik özellikleri incelendi. TlGa1-xInxTe2(x=0.25, 0.50, 0.75) alaşımları, TlInTe2 ve TlGaTe2alaşımları gibi tetragonal yapıya sahiptir. Alaşımların Kristal yapıları P1 (                              ) uzay grubu kullanılarak elde edildi. Yapısalhesaplamalardan, birim hücre içerisindeki In konsantrasyonunun artışı ile örgüparametresi a ve birim hücre hacminin arttığını tespit edildi. Incelenenalaşımların, elektronik band yapı ve durum yoğunluğu hesaplamalarından,yarıiletken özellik sergilediğini bulundu. Ayrıca, alaşımların yasak bandenerjisinin x konsantrasyonuna bağlı olarak değiştiği tespit edildi. Hesaplananyasak band enerjileri alaşımların dar band aralıklı yarıiletken olduğunugöstermektedir. Bu çalışmanın buldularıdörtlü TlGa1-xInxTe2 (x=0.25, 0.50, 0.75)alaşımları ile ilgilenen araştırmacılar için iyi bir referans çalışmaolacaktır.
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UR  - https://dergipark.org.tr/en/pub/sdufeffd/issue//321951
L1  - https://dergipark.org.tr/en/download/article-file/328967
ER  -