@article{article_343272, title={Channel Length Modulation in a Polystyrene Insulated Organic Field Effect Transistor Using PEDOT: PSS Composite Electrode}, journal={Sakarya University Journal of Science}, volume={22}, pages={1493–1499}, year={2018}, DOI={10.16984/saufenbilder.343272}, author={Demir, Ahmet}, keywords={P3HT,Polymer gate electrode,Transparent OFETs,Insulators,PEDOT:PSS,Polystyrene,P3HT}, abstract={<p class="MsoNormal" style="margin-bottom:12pt;"> <span>The Organic Field Effect
Transistor (OFET) with channel length modulation was fabricated by spin coating
method using a Poly(3-hexylthiophene) (P3HT) and the Polystyrene (PS) insulator
on a prepatterned as source-drain Indium thin oxide (ITO) substrate. The
poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was used
as <span>  </span>gate electrode. So, the structure of
OFET device is obtained as ITO/P3HT/PS/PEDOT:PSS. The ITO/PS/PEDOT:PSS
structure was prepared using same method for capacitance measurements of a
polymer insulator. Electrical characterization of OFET devices were held in
total darkness and in air ambient for the purpose of achieving output and
transfer current-voltage ( <i>I-V </i>)
characteristics. The main parameters such as the threshold voltage ( <i>V <sub>Th </sub> </i>), field effect mobility ( </span> <i> <span style="font-family:Symbol;">m </span> </i> <i> <sub> <span>FET </span> </sub> </i> <span>)
and current on/off ratio ( <i>I <sub>on/off </sub> </i>)
of the OFET devices were extracted from capacitance-frequency ( <i>C-f </i>) plot of the ITO/PS/PEDOT:PSS
structure. <span>  </span>It was found that fabricated
PS-OFETs exhibit good device performance such as low <i>V <sub>Th </sub> </i>, remarkable mobility, and <span>  </span> <i>I <sub>on/off </sub> </i>
values. </span> </p> <p> <br /> </p>}, number={6}, publisher={Sakarya University}