TY  - JOUR
T1  - Channel Length Modulation in a Polystyrene Insulated Organic Field Effect Transistor Using PEDOT: PSS Composite Electrode
TT  - PEDOT: PSS Kompozit Elektrot Kullanarak Polistiren Yalıtkanlı Organik Alan Etkili Transistörde Kanal Uzunluğu Modülasyonu
AU  - Demir, Ahmet
PY  - 2018
DA  - December
Y2  - 2017
DO  - 10.16984/saufenbilder.343272
JF  - Sakarya University Journal of Science
JO  - SAUJS
PB  - Sakarya University
WT  - DergiPark
SN  - 2147-835X
SP  - 1493
EP  - 1499
VL  - 22
IS  - 6
LA  - en
AB  - The Organic Field EffectTransistor (OFET) with channel length modulation was fabricated by spin coatingmethod using a Poly(3-hexylthiophene) (P3HT) and the Polystyrene (PS) insulatoron a prepatterned as source-drain Indium thin oxide (ITO) substrate. Thepoly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was usedas gate electrode. So, the structure ofOFET device is obtained as ITO/P3HT/PS/PEDOT:PSS. The ITO/PS/PEDOT:PSSstructure was prepared using same method for capacitance measurements of apolymer insulator. Electrical characterization of OFET devices were held intotal darkness and in air ambient for the purpose of achieving output andtransfer current-voltage (I-V)characteristics. The main parameters such as the threshold voltage (VTh), field effect mobility (mFET)and current on/off ratio (Ion/off)of the OFET devices were extracted from capacitance-frequency (C-f) plot of the ITO/PS/PEDOT:PSSstructure. It was found that fabricatedPS-OFETs exhibit good device performance such as low VTh, remarkable mobility, and Ion/offvalues.
KW  - P3HT
KW  - Polymer gate electrode
KW  - Transparent OFETs
KW  - Insulators
KW  - PEDOT:PSS
KW  - Polystyrene
KW  - P3HT
N2  - Kanal uzunluğu modülasyonluOrganik Alan Etkili Transistör (OFET), önceden oluşturulmuş indiyum kalayoksitli (ITO) kaynak-savak alt-tabaka üzerinde Poly(3-hexylthiophene) (P3HT) vePolystyrene (PS) yalıtkan kullanarak spin kaplama yöntemi ile üretildi. Kapı Elektrodu olarakpoly(3,4-ethylenedioxythiophene) polystyrene sulfonate(PEDOT:PSS) kullanılmıştır.Böylece, OFET cihazının yapısı ITO/P3HT/PS/ PEDOT:PSS olarak elde edilmiştir.ITO/PS/PEDOT:PSS yapısı polimer yalıtkanının kapasitans ölçümleri için aynıyöntem kullanılarak hazırlanmıştır. OFET cihazlarının elektrikselkarakterizasyonu çıkış ve transfer akım voltaj (I-V) karakteristikleri eldeetmek amacıyla tam karanlıkta ve hava ortamında yapılmıştır. OFET cihazlarınıneşik voltajı (VTh), alan etkili mobilite (mFET) ve akımaçma/kapama oranı (Ion/off) gibi ana parametreler, ITO/PS/PEDOT:PSS yapısınınkapasitans frekansı (C-f) ölçümlerinden elde edildi. Üretilen PS-OFET'lerin düşükVTh, kaydadeğer mobilite ve akım açık/kapama değerleri gibiiyi cihaz performansı sergilediği gözlenmiştir.
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UR  - https://doi.org/10.16984/saufenbilder.343272
L1  - https://dergipark.org.tr/en/download/article-file/376651
ER  -