TY  - JOUR
TT  - The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter
AU  - Zabeli, Milaim
AU  - Caka, Nebi
AU  - Limani, Myzafere
AU  - Kabashi, Qamil
PY  - 2017
DA  - October
DO  - 10.28978/nesciences.358859
JF  - Natural and Engineering Sciences
JO  - NESciences
PB  - Cemal TURAN
WT  - DergiPark
SN  - 2458-8989
SP  - 135
EP  - 148
VL  - 2
IS  - 3
KW  - CMOS inverter
KW  - threshold voltage
KW  - voltage critical value
KW  - noise margins
KW  - transconductance parameter
N2  - The objective of this paper is to research the impact of electrical and physical parameters thatcharacterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOSinverter for static mode of operation. In addition to this, the paper also aims at exploring thedirectives that are to be followed during the design phase of the CMOS inverters that enabledesigners to design the CMOS inverters with the best possible performance, depending onoperation conditions. The CMOS inverter designed with the best possible features also enables thedesigning of the CMOS logic circuits with the best possible performance, according to theoperation conditions and designers’ requirements.
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UR  - https://doi.org/10.28978/nesciences.358859
L1  - https://dergipark.org.tr/en/download/article-file/372350
ER  -