TY  - JOUR
T1  - Electrical characteristics of Au/Ti/HfO2/n-GaAs  metal-insulator-semiconductor structures with high-k interfacial layer
AU  - Karabulut, Abdulkerim
AU  - Orak, İkram
AU  - Türüt, Abdülmecit
PY  - 2018
DA  - December
DO  - 10.32571/ijct.456902
JF  - International Journal of Chemistry and Technology
JO  - Int. J. Chem. Technol.
PB  - Rabia ACEMİOĞLU
WT  - DergiPark
SN  - 2602-277X
SP  - 116
EP  - 122
VL  - 2
IS  - 2
LA  - en
AB  - We have fabricated,metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts weremade by dc magnetron sputtering technique, and hafniumdioxide (HfO2) interfacialinsulating layer with 3, 5 and 10 nm thickness has been formed by the atomiclayer depositon (ALD) technique.The series resistance value from the forward bias current-voltage (I-V) curves of 3 nm and 5 nm MIS structures very slightly has reducedwith a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO2 layer thickness. Thebarrier increment in the rectifying contacts is very important for an adequatebarrier height in FET operation and is useful for the gates of the metal-semiconductorfield-effect transistorsor also show promise as small signal zero-bias rectifiers and microwave mixers.
KW  - Metal-Oxide-semiconductor structures
KW  - GaAs semiconductor
KW  - Hafnia HfO2
KW  - Atomic layer deposition (ALD) technique
CR  - 1. Rhoderick, E.H.; Williams, R.H. Metal-Semiconductor Contacts, Clerandon Press, Oxford University Press, 1988.
CR  - 2. Mönch, W. Electronics Properties of Semiconductor Interfaces, Springer-Verlag, Berlin Heidelberg, 2004.
CR  - 3. Sze, S.M. Physics of Semiconductor Devices, Second Ed. Willey, New York, 1981.
CR  - 4. Colinge, J.P., Colinge, C.A. Physics of Semiconductor Devices, Kluwer Academic Publishers, New York, 2002.
CR  - 5. Mo Wu, Alivov, Y.I.; Morkoc¸ H. J. Mater. Sci- Mater. El.  2008, 19,  915–951.
CR  - 6. Missoum, I.; Ocak, Y.S., Benhaliliba, M., Benouis, C.E., Chaker, A. Synthetic Met. 2016, 214, 76.
CR  - 7. Cheong, K.Y.; Moon, J.H.; Kim, H.J., Bahng, W.; Kim, N.K. J. Appl. Phys. 2008, 103,  084113.
CR  - 8. Reddy, V.R.; Manjunath, V.; Janardhanam, V.; Kil, Y.H.; Choi, C-J. J. Electron. Mater. 2014, 43(9) 3499.
CR  - 9. Turut, A. Karabulut, A.; Ejderha, K.; Bıyıklı, N. Mater. Res. Express 2015, 2, 046301.
CR  - 10. Pan, T.M.; Lee, J.D.; Shu, W-H.; Chen, T.T. Appl. Phys. Lett. 2006, 89, 232908.
CR  - 11. Cheung, S.K.; Cheung, N.W. Appl. Phys. Lett. 1986, 49, 85.
CR  - 12. Kumar, R.; Chand, S. J. Electron. Mater. 2015, 44(1), 194.
CR  - 13. E. E. Tanrıkulu, D. E. Yıldız, A. Günen, Ş. Altındal, Phys. Scripta 2015, 90, 095801.
CR  - 14. Huang, W.C.; Linb,  T.C.; Horng, C.T., Li, YH. Mat. Sci. Semicon. Proc. 2013, 16, 418-423
CR  - 15. A. Gümüş and Ş. Altındal, Mat. Sci. Semicon. Proc. 2014, 28, 66-71.
CR  - 16. Martens, K.; Wang, W.F.; Dimoulas, A.; Borghs, G.; Meuris, M.; Groseneken, G.; Maes, H.E. Solid State Electron. 2007, 51, 1101.
CR  - 17. Korucu, D., Duman, S. Thin Solid Films 2013, 531, 436.
CR  - 18. Jyothi, I.; Janardhanam, V; Hong, H.; Choi, C.J. Mat. Sci. Semicon. Proc.  2015, 39, 390.
CR  - 19. Özden, Ş.; Tozlu C;. Pakma, O. Int. J.  Photoenergy 2016, 2016, 6157905.
CR  - 20. Chen J., Wang, Lv, Q. J.; Tang H.; Li, X.; J. Alloy. Compd. 2015, 649, 1220-1225.
CR  - 21. Guzel, A.; Duman, S.; Yıldırım, N.; Turut, A. J. Electron. Mater. 2016, 45(6), 2808.
CR  - 22. Kaushal, P.; Chand, S. Intern. J. Electron. 2016, 103(6), 937.
CR  - 23. Asubay, S.; Genisel M.F.; Ocak, Y.S. Mater. Sci. Semicon. Proc. 2014, 28, 94.
CR  - 24. Zizeng, L.; Mingmin, C.; Shengkai, W.; Qi, L.; Gongli, X.; Honggang L.; Haiou, L. J. Semicond. 2016, 37, 026002.
CR  - 25. Morrison, D.J.; Wright, N.G.; Horsfall, A.B.; Johnson, C.M.; OÕNeill, A.G.; Knights, A.P.; Hilton, K.P.; Uren, M.J. Solid State Electron. 2000, 44, 1879.
CR  - 26. Osvald, J.; Horvath, Zs.J. Appl. Surf. Sci. 2004, 234, 349.
CR  - 27. Kavasoglu, N.; Kavasoglu, A.S.; Metin, B. Mater. Res. Bull. 2015, 70, 804.
CR  - 28. Rahmatallahpur Sh.; Yegane, M. Physica B: Conden.Matter. 2011, 406, 1351-1356.
CR  - 29. Sekhar, M.C.; Reddy, N.N.K.; Verma, V.K.,  Uthanna, S. Ceram. Int. 2016, 42, 18870.
CR  - 30. Sani, N.; Wang, X.; Granberg, H.; Ersman, P.A.; Crispin, X.; Dyreklev, P.; Engquist, I.; Gustafsson, G.; Berggren, M. Sci. Rep. 2016, 6, 28921.
CR  - 31. Duman, S.; Turgut, G.; Ozcelik, F.S.; Gurbulak, B. Philos. Mag. 2015, 95, 1646-1655.
CR  - 32. Deniz, A.R; Çaldıran, Z.; Metin, Ö.; Meral, K.; Aydoğan, Ş.; J. Colloid  Interf. Sci. 2016, 473, 172.
CR  - 33. Mönch, W. Mat. Sci. Semicon. Proc. 2014, 28, 2–12.
CR  - 34. Turut, A.; Ejderha, K.; Yildirim, N.; Abay, B. J. Semicond. 2016, 37(4), 044001.
CR  - 35. Eglash, S.J.; Newman, N.; Pan, S.; Mo, D.; Shenai, K.; Spicer, W.E.; Ponce F.A.; Collins, D.M. J. Appl. Phys. 1987, 61, 5159.
CR  - 36. Turut, A.; Bati, B.; Kȍkçe, A.; Sağlam, M.; Yalçin, N. Phys. Scripta 1996, 53, 118.
UR  - https://doi.org/10.32571/ijct.456902
L1  - https://dergipark.org.tr/en/download/article-file/569240
ER  -