@article{article_486961, title={Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature}, journal={Celal Bayar University Journal of Science}, volume={15}, pages={151–160}, year={2019}, DOI={10.18466/cbayarfbe.486961}, author={Mantarcı, Asim}, keywords={InGaN,thin film technology,RF magnetron sputtering,substrate temperature}, abstract={<p class="MsoNormal" style="margin-top:0cm;margin-right:28.25pt;margin-bottom:.0001pt;margin-left:1cm;text-align:justify;"> <span lang="en-us" xml:lang="en-us">Indium Gallium Nitride </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> thin film was successfully grown on the </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> substrate using an RF magnetron sputter under
condition of different substrate temperatures. Various experimental
measurements were taken to understand effect of substrate temperature on the
structure of thin film and results were analyzed. Grazing mode of XRD results
confirmed that </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> thin film has a hexagonal structure with </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> plane for </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> and </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us">substrate
temperature. It was seen that structural parameters of thin film show a change
with substrate temperature change. Reasons were discussed. Strain and stress
values in </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> thin film were calculated from experimental
results and it was found that all thin film has compressive stress.
Morphological parameters of thin film were measured by AFM and it was
understood that these properties are varied by changing substrate temperature.
Also, growth mode of some thin film was found to be layer-plus-island mode
(Stranski-Krastanov growth mode), others was found to be layer by layer growth
mode (Frank van der Merwe mode). SEM analysis gives that increasing substrate
temperature worsened the surface structure of </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> thin film; it is compatible with and supports
XRD results. Compositional values in </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> thin film were found from XPS analysis. In
addition to our material, carbon and oxygen have also been obtained from XPS results,
as expected. Detailed structural and morphological properties of </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us">thin
film have been seen to change by changing substrate temperature and we believe
this may play an important role in the production of </span> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us"> </span> <span lang="en-us" xml:lang="en-us"> based optoelectronic devices. </span> </p> <p> </p>}, number={2}, publisher={Manisa Celal Bayar University}