@article{article_598096, title={INFLUENCE OF SULFURIZATION ON THE PROPERTIES OF Cu2ZnSnS4 (CZTS) THIN FILMS PREPARED BY A TWO-STAGE PROCESS}, journal={Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi}, volume={8}, pages={1064–1072}, year={2019}, DOI={10.28948/ngumuh.598096}, author={Olğar, Mehmet Ali}, keywords={CZTS,Sputtering,Sulfurization Time,Temperature,Two-stage Method}, abstract={<p class="MsoNormal" style="margin-bottom:.0001pt;text-align:justify;line-height:normal;"> <span lang="en-us" style="font-size:10pt;font-family:’Times New Roman’, serif;" xml:lang="en-us">   In this
study, CZTS thin films were grown by a two-stage method involved sputter
deposition of metallic Cu, Zn, and Sn layers to form Cu/Sn/Zn/Cu metallic
stacks on glass and sulfurization of the metallic stacks at 540 and 580 °C for
1 and 5 min in sulfur vapor atmosphere. The reacted samples at two different
sulfurization temperatures and sulfurization times were characterized employing
XRD, SEM, EDX, Raman spectroscopy, optical spectroscopy, and Van der Pauw
methods. The metallic stacks and CZTS thin films showed Cu-rich and Zn-poor
composition. XRD patterns of the reacted films showed almost pure kesterite
CZTS phase except for presence of very small amount of Cu <sub>2-x </sub>S phase.
Raman spectra of the films verified formation of kesterite phase in the films.
SEM images showed that the CZTS540-1 sample had more compact, denser and
uniform structure. Optical band gap values were found to be in good agreement
with the literature. The CZTS540-1 thin film showed the highest carrier
concentration and lowest resistivity values amongst the other samples. </span> </p> <p> </p>}, number={2}, publisher={Nigde Omer Halisdemir University}