@article{article_856824, title={General electrical characterisation of Ag/TiO2/n-InP/Au Schottky Diode}, journal={Karadeniz Fen Bilimleri Dergisi}, volume={11}, pages={328–339}, year={2021}, DOI={10.31466/kfbd.856824}, author={Bılgılı, Ahmet Kursat and Çağatay, Rabia and Ozturk, Mustafa and Özer, Metin}, keywords={TiO2, n-InP, Richardson coefficient, Gaussian distribution, Schottky}, abstract={<p>In this study Ag/TiO2/n-InP/Au structures are formed on 500 μm thick, (100) oriented n-InP semiconductor having 3.13x1018 cm-3 carrier density, by using sputtering method. TiO2 is grown as an interface with thickness of 60 Å. Some parameters of this structure are investigated in temperature range of 120- 360 K. It is noticed that there are two linear regions in forward bias current-voltage (I-V) plot. These two regions are called as LBR (low bias region) and MBR(middle bias region). Richardson coefficient is determined and mean barrier height is calculated with double Gaussian distribution. <br /> </p>}, number={2}, publisher={Giresun University}