@article{article_867847, title={Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film}, journal={Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi}, volume={21}, pages={257–265}, year={2021}, DOI={10.35414/akufemubid.867847}, author={Yiğit, Serap and Gündoğdu, Yasemin and Kılıç, Hamdi Şükür}, keywords={IGZO, , thin film, , diode, , cheung cheung, Norde, PLD}, abstract={In this study, IGZO thin films were deposited on SLG and p-Si wafer at room temperature, under oxygen gas pressure of 5×10-2 and 7×10-2 mbar, using PLD technique and these thin films were annealed at 300oC temperature. IGZO thin films were grown in amorphous structure. As the oxygen gas pressure was increased, the particle size in the thin films were increased. IGZO/p-Si heterojunction diode was produced based on IGZO thin film that was grown at oxygen gas pressure of 7×10-2 mbar and not annealed, and J-V curves of this diode in darkness and under the illumination condition were obtained and then its ideality factor and barrier height were calculated. In an illumination condition, n,〖 R〗_s and Ф_b values of IGZO/Si heterojunction diode were calculated by the conventional J-V, Cheung Cheung and Norde methods. Results obtained in this work have been interpreted as well as concluded to be close to each other.}, number={2}, publisher={Afyon Kocatepe University}, organization={Selçuk Üniversitesi Bilimsel Araştırma Projeleri Koordinatörlüğü}