We here aimed to determined the minority carrier diffusion coefficient of germanium from the capacitance -voltage characteristics of the. Au/Ge /Sn Schottky diode. For the device fab- rication and 10 Ohm-cm resistivity was used. The evaporation of gold and tin metals were per- formed under a vacuum of 10 ’5 Torr. Capacitance-voltage-frequency characteristics were mea- sured at room temperature and liquid nitrogen temperature. We experimentally determined minority carrier diffusion coefficient as 47-57 cm2 /s by meam of the diffusion capacitance con- cept of p /n junction which had been adapted into a Schottky barrier.
Primary Language | English |
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Subjects | Engineering |
Journal Section | Research Articles |
Authors | |
Publication Date | January 1, 1988 |
Submission Date | January 1, 1988 |
Published in Issue | Year 1988 Volume: 37 |
Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering
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