Cryogenic DC Characteristics of Low Threshold Voltage (VTH) n-channel MOSFETs

Year 2019, Volume: 7 Issue: 3, 362 - 365, 30.07.2019

Mustafa Berke Yelten

https://doi.org/10.17694/bajece.570215

Cited By: 2

Abstract

Cryogenic electronics
has grown in its widespread use for various technological applications.
Particularly, CMOS devices and circuits are more frequently used in such
systems due to their dominance in the electronics industry. At cryogenic
temperatures, characteristics of CMOS devices vary, which should be
characterized with measurements. In this paper, the changes in the electronic
behavior of a low threshold voltage (V_TH)
n-channel MOSFET (nMOSFET) are captured experimentally. The results are then
compared with the measurements of a regular nMOSFET having the same channel
width and length. It is shown that although the V_TH increase of both transistors is at the same amount,
this value corresponds to a more significant percentage of the nominal
threshold voltage for the low V_TH
nMOSFET. 

Keywords

Cryogenic electronics, threshold voltage, low threshold voltage transistors

Project Number

215E080

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