Research Article
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Year 2019, Volume: 7 Issue: 3, 362 - 365, 30.07.2019
https://doi.org/10.17694/bajece.570215

Abstract

Supporting Institution

TÜBİTAK

Project Number

215E080

References

  • Shafique, A., Yazici, M., Kayahan, H., Ceylan, O., Gurbuz, Y., “Cryogenic Measurements of a Digital Pixel Readout Integrated Circuit for LWIR,” Proc. SPIE 9451, Infrared Technology & Applications, XLI, 94510Y, 1 – 6, 2015.
  • Ceylan, O., Kayahan, H., Yazici, M., Baran, M.B., Gurbuz, Y., “Design and Realization of 144 x 7 TDI ROIC with Hybrid Integrated Test Structure”, Proc. SPIE 8353, Infrared Technology & Applications, XXXVIII, 83531Q, 1 – 12, 2012.
  • Cressler, J.D. “Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics,” IEEE Transactions Device and Materials Reliability (TDMR), 10, 4, 437 – 448, 2010.
  • Woods, B. O., Mantooth H. A., Cressler, J. D., “SiGe HBT Compact Modeling for Extreme Temperatures,” ISDRS, College Park, Maryland, ABD, 1 – 2, 2007.
  • Kabaoğlu, A., and Yelten, M. B., “A cryogenic modeling methodology of MOSFET IV characteristics in BSIM3”, In IEEE 2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), pp. 1-4, 2017.
  • Ladd, T.D., Jelezko, F., Laflamme, R., Nakamura, Y., Monroe, C., O’Brien, J.L., “Quantum Computers”, Nature, vol. 464, 45 – 53, 2010.
  • Homulle, H., Visser, S., Patra, B., Ferrari, G., Prati, E., Almudéver, C.G., Bertels, K., Sebastiano, F., Charbon, E., 2016. “CryoCMOS hardware technology a classical infrastructure for a scalable quantum computer” Proceedings of the ACM International Conference on Computing Frontiers (CF '16). ACM, New York, NY, ABD, 282-287.
  • Ware, F., Gopalakrishnan, L., Linstadt, E., McKee, S. A., Vogelsang, T., “Do Superconducting Processors Really Need Cryogenic Memories? The Case for Cold DRAM”, In ACM Proceedings of the International Symposium on Memory Systems, pp. 183-188, October 2017.
  • Tannu, S. S., Carmean, D. M., & Qureshi, M. K., “Cryogenic-DRAM based memory system for scalable quantum computers: a feasibility study,” In Proceedings of the ACM International Symposium on Memory Systems, pp. 189-195, October 2017.
  • Streetman, B. and Banerjee, S., 2016, “Solid State Electronic Devices,” Pearson Education, Global 7th edition, Essex, İngiltere.
  • Kabaoğlu, A., Solmaz, N. Ş., İlik, S., Uzun Y., and Yelten, M. B. "Statistical MOSFET Modeling Methodology for Cryogenic Conditions," in IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 66-72, Jan. 2019.

Cryogenic DC Characteristics of Low Threshold Voltage (VTH) n-channel MOSFETs

Year 2019, Volume: 7 Issue: 3, 362 - 365, 30.07.2019
https://doi.org/10.17694/bajece.570215

Abstract

Cryogenic electronics
has grown in its widespread use for various technological applications.
Particularly, CMOS devices and circuits are more frequently used in such
systems due to their dominance in the electronics industry. At cryogenic
temperatures, characteristics of CMOS devices vary, which should be
characterized with measurements. In this paper, the changes in the electronic
behavior of a low threshold voltage (VTH)
n-channel MOSFET (nMOSFET) are captured experimentally. The results are then
compared with the measurements of a regular nMOSFET having the same channel
width and length. It is shown that although the VTH increase of both transistors is at the same amount,
this value corresponds to a more significant percentage of the nominal
threshold voltage for the low VTH
nMOSFET. 

Project Number

215E080

References

  • Shafique, A., Yazici, M., Kayahan, H., Ceylan, O., Gurbuz, Y., “Cryogenic Measurements of a Digital Pixel Readout Integrated Circuit for LWIR,” Proc. SPIE 9451, Infrared Technology & Applications, XLI, 94510Y, 1 – 6, 2015.
  • Ceylan, O., Kayahan, H., Yazici, M., Baran, M.B., Gurbuz, Y., “Design and Realization of 144 x 7 TDI ROIC with Hybrid Integrated Test Structure”, Proc. SPIE 8353, Infrared Technology & Applications, XXXVIII, 83531Q, 1 – 12, 2012.
  • Cressler, J.D. “Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics,” IEEE Transactions Device and Materials Reliability (TDMR), 10, 4, 437 – 448, 2010.
  • Woods, B. O., Mantooth H. A., Cressler, J. D., “SiGe HBT Compact Modeling for Extreme Temperatures,” ISDRS, College Park, Maryland, ABD, 1 – 2, 2007.
  • Kabaoğlu, A., and Yelten, M. B., “A cryogenic modeling methodology of MOSFET IV characteristics in BSIM3”, In IEEE 2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), pp. 1-4, 2017.
  • Ladd, T.D., Jelezko, F., Laflamme, R., Nakamura, Y., Monroe, C., O’Brien, J.L., “Quantum Computers”, Nature, vol. 464, 45 – 53, 2010.
  • Homulle, H., Visser, S., Patra, B., Ferrari, G., Prati, E., Almudéver, C.G., Bertels, K., Sebastiano, F., Charbon, E., 2016. “CryoCMOS hardware technology a classical infrastructure for a scalable quantum computer” Proceedings of the ACM International Conference on Computing Frontiers (CF '16). ACM, New York, NY, ABD, 282-287.
  • Ware, F., Gopalakrishnan, L., Linstadt, E., McKee, S. A., Vogelsang, T., “Do Superconducting Processors Really Need Cryogenic Memories? The Case for Cold DRAM”, In ACM Proceedings of the International Symposium on Memory Systems, pp. 183-188, October 2017.
  • Tannu, S. S., Carmean, D. M., & Qureshi, M. K., “Cryogenic-DRAM based memory system for scalable quantum computers: a feasibility study,” In Proceedings of the ACM International Symposium on Memory Systems, pp. 189-195, October 2017.
  • Streetman, B. and Banerjee, S., 2016, “Solid State Electronic Devices,” Pearson Education, Global 7th edition, Essex, İngiltere.
  • Kabaoğlu, A., Solmaz, N. Ş., İlik, S., Uzun Y., and Yelten, M. B. "Statistical MOSFET Modeling Methodology for Cryogenic Conditions," in IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 66-72, Jan. 2019.
There are 11 citations in total.

Details

Primary Language English
Subjects Electrical Engineering
Journal Section Araştırma Articlessi
Authors

Mustafa Berke Yelten 0000-0001-7482-0536

Project Number 215E080
Publication Date July 30, 2019
Published in Issue Year 2019 Volume: 7 Issue: 3

Cite

APA Yelten, M. B. (2019). Cryogenic DC Characteristics of Low Threshold Voltage (VTH) n-channel MOSFETs. Balkan Journal of Electrical and Computer Engineering, 7(3), 362-365. https://doi.org/10.17694/bajece.570215

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