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Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes

Year 2023, Volume: 1 Issue: 1, 1 - 10, 30.05.2023

Abstract

In this study, voltage and frequency dependent dielectric properties of Au/n-CdTe Schottky diodes grown by thermal evaporation method were investigated. The frequency and voltage dependent of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range of 1 kHz - 500 kHz at room temperature. Dielectric constant (ε^'), dielectric loss (ε^''), dielectric loss tangent (tan⁡δ), the ac electrical conductivity (σ_ac), and complex impedance (Z^*) were calculated from the C-V and G /ω -V characteristics and plotted as a function of frequency.

References

  • A. Gukasyan, A. Kvit, and Y. Klevkov, “High-Resolution PL Characterization of Impurity Segregation and Their Complex Formation on Extended Defects in CdTe,” Solid State Com., vol. 97, no. 10, pp. 897–902, Mar. 1996, doi: 10.1016/0038-1098(95)00417-3.
  • S. Lalitha, S. Zh. Karazhanov, P. Ravindran, and S. Senthilarasu, “Electronic Structure, Structural and Optical Properties of Thermally Evaporated CdTe Thin Films,” Physica B., vol. 387, no. 1–2, pp. 227–238, Jan. 2007, doi: 10.1016/j.physb.2006.04.008.
  • A. Castaldini, A. Cavallini, B. Fraboni, L. Polenta, P. Fernandez, and J. Piqueras, “Compensation and Deep Levels in II–VI Compounds,” Mater. Sci. Eng. B., vol. 42, no.1–3, pp. 302–305, Dec. 1996, doi: 10.1016/S0921-5107(96)01726-6.
  • X. Yi, O. Lin, X. Zhao, and K. Wong,” The Effect of Surface Preparation on Properties of Cadmium Telluride Thin Film Heterojunctions,” J. Phys. D Appl. Phys., vol. 23, no. 7, pp. 912, July 1990, doi: 10.1088/0022-3727/23/7/025.
  • K. Guergouri, M. S. Ferah, R. Triboulet, and Y. Marfaing, “Study of the Crystalline Quality of CdTe, CdZnTe and CdMnTe Substrates Used for Liquid Phase Epitaxy of Cd0.7Hg0.3Te,” J. Cryst. Growth, vol. 139, no. 1–2, pp. 6–14, May 1994, doi: 10.1016/0022-0248(94)90022-1.
  • A. Romeo, G. Khrypunov, S. Galassini, H. Zogg, and A. N. Tiwari, “Bifacial Configurations for CdTe Solar Cells,” Solar Energy Mater. Solar Cells, vol. 91, no. 15–16, pp. 1388–1391, Sep. 2007, doi: 10.1016/j.solmat.2007.03.010.
  • Z. R. Khan, M. Zulfequar, and M. S. Khan, “Structural, Optical, Otoluminescence, Dielectric and Electrical Studies of Vacuum-Evaporated CdTe Thin Films,” Bull. Mater. Sci., vol. 35, no. 2, pp. 169–174, Apr. 2012, doi: 10.1007/s12034-012-0274-x.
  • H. Kanbur, Ş. Altindal, T. Mammadov, and Y. Şafak, “Effects of Illumination on I-V, C-V and G/ω –V Characteristics of Au/n-CdTe Schottky Barrier Diodes,” J. Optoelectron. Adv. M., vol. 13, no. 6, pp. 713–718, June 2011.
  • M. S. Han, T. W. Kang, J. H. Leem, M. H. Lee, K. J. Kim, and T. W. Kim, “Strain Effects in CdTe/Si Heterostructures,” J. Appl. Phys., vol. 82, no. pp. 6012, June 1998, doi: 10.1063/1.366467.
  • S. Surabhi, K. Anurag, and S. R. Kumar, “Effect of Annealing on the Structural, Compositional and Optical Properties of CdTe Films,” Mater. Today: Proc., vol. 45, no. 6, pp. 4477–4482, Feb. 2021, doi: 10.1016/j.matpr.2020.12.988.
  • H. Tatsuoka, H. Kuwabara, Y. Nakanishi, and H. Fujiyasu, “CdTe(111) Growth on Misoriented Si(100) Substrates by Hot-Wall Epitaxy,” J. Cryst. Growth, vol. 129, no. 3–4, pp. 686–690, Apr. 1993, doi: 10.1016/0022-0248(93)90504-P.
  • H. Hernández-Contreras, G. Contreras-Puente, J. Aguilar-Hernández, A. Morales-Acevedo, J. Vidal-Larramendi, and O. Vigil-Galán, “CdS and CdTe Large Area Thin Films Processed by Radio-Frequency Planar-Magnetron Sputtering,” Thin Solid Films, vol. 403, no. 404, pp.148–152, Feb. 2002, doi: 10.1016/S0040-6090(01)01523-1.
  • A. U. Ubale, R. J. Dhokne, P. S. Chikhlikar, V. S. Sangawar, and D. K. Kulkarni, “Characterization of Nanocrystalline Cadmium Telluride Thin Films Grown by Successive Ionic Layer Adsorption and Reaction (SILAR) Method,” Bull. Mater. Sci., vol. 29, pp.165–168, Apr. 2006, doi: 10.1007/BF02704610.
  • H. Nishino and Y. Nishijima, “CdTe(111)B/Si(100) Structure Grown by Metalorganic Vapor Phase Epitaxy with Te Adsorption and Annealing,” J. Cryst. Growth, vol. 167, no. 3–4, pp. 488–494, Oct. 1996, doi: 10.1016/0022-0248(96)00288-6.
  • S. Deivanayaki, P. Jayamurugan, R. Mariappan, and V. Ponnuswamy, “Optical and Structural Characterization of CdTe Thin Films by Chemical Bath Deposition Technique,” Chalcogenide Lett., vol. 7, no.3, pp. 159–163, Mar. 2010.
  • N. A. Khan, K. S. Rahman, K. A. Aris, A. M. Ali, Halina Misran, M. Akhtaruzzaman, S. K. Tiong and N. Amin, “Effect of Laser Annealing on Thermally Evaporated CdTe Thin Films for Photovoltaic Absorber Application,” Sol. Energy, vol. 173, pp. 1051–1057, Oct. 2018, doi: 10.1016/j.solener.2018.08.023.
  • S. Singh, R. Kumar, and K. N. Sood, “Structural and Electrical Studies of Thermally Evaporated Nanostructured CdTe Thin Films,” Thin Solid Films, vol. 519, no. 3, pp. 1078–1081, Nov. 2010, doi: 10.1016/j.tsf.2010.08.047.
  • J. M. Kestner, S. McElvain, S. Kelly, T. R. Ohno, L.M. Woods, and C. A. Wolden, “An Experimental and Modeling Analysis of Vapor Transport Deposition of Cadmium Telluride,” Sol. Energy Mater. Sol. Cells, vol. 83, no.1, pp. 55–65, June 2004, doi: 10.1016/j.solmat.2004.02.013.
  • B. Barış, “Frequency Dependent Dielectric Properties in Schottky Diodes Based on Rubrene Organic Semiconductor,” Phys. E: Low-Dimens. Syst. Nanostructures, vol. 54, pp. 171–176, Dec. 2013, doi: 10.1016/j.physe.2013.06.018.
  • D. K. Dhruv, S. D. Dhruv, N. Agrawal, and P. B. Patel, “Fabrication and Transport Properties of Thermally Evaporated Cadmium Selenide Thin Films for Photovoltaic Applications,” Mater. Today: Proc., vol. 55, no. 1, pp. 67–72, Feb. 2022, doi: 10.1016/j.matpr.2021.12.173.
  • S. S. Shaikh, Mohd Shkir, and E. U. Masumdar, “Exploration of the Spray Deposited Cadmium Telluride Thin Films for Optoelectronic Devices,” Phys. B: Condens. Matter, vol. 580, pp. 411831, Mar. 2020, doi: 10.1016/j.physb.2019.411831.
  • S. M. Sze, Physics of Semiconductor Devices, 2nd Edition. John Wiley & Sons, New York, 1981.
  • E. H. Rhoderick, and R. H. Williams, Metal–Semiconductor Contacts, 2nd Edition. Clarendon Press, Oxford, 1988.
  • H. Kanbur, Ş. Altındal, and A. Tataroğlu, “The Effect of Interface States, Excess Capacitance and Series Resistance in the Al/SiO2/p-Si Schottky Diodes,” Appl. Surf. Sci., vol. 252, no. 5, pp. 1732–1738, Dec. 2005, doi: 10.1016/j.apsusc.2005.03.122.
  • Ş. Altındal, İ. Dökme, M. M. Bülbül, N. Yalçın, and T. Serin, “The Role of the Interface Insulator Layer and Interface States on the Current-Transport Mechanism of Schottky Diodes in Wide Temperature Range,” Microelektron. Eng., vol. 83, no.3, pp. 499–505, Mar. 2006, doi: 10.1016/j.mee.2005.11.014.
  • P. Chattopadhyay, and B. Raychaudhuri, “Frequency Dependence of Forward Capacitance-Voltage Characteristics of Schottky Barrier Diodes,” Solid State Electron., vol. 35, no. 4, pp. 605–610, Apr. 1993, doi: 10.1016/0038-1101(93)90272-R.
  • I. M. Dharmadasa, G. G. Roberts, and M. C. Petty, “Electrical Properties of Au/n-CdTe Schottky Diodes,” J. Phys. D. Appl. Phys., vol. 15, no. 5, pp. 901, Nov. 1982, doi: 10.1088/0022-3727/15/5/018.
  • S. Gurumurthy, H. L. Bhat, and V. Kumar, “Excellent Rectifying Characteristics in Au/n-CdTe Diodes Upon Exposure to Rf Nitrogen Plasma,” Semicond. Sci. Technol., vol. 14, no. 10, pp. 909, June 1999, doi: 10.1088/0268-1242/14/10/306.
  • R. L. Van Meirhaeghe, R. Van de Walle, W. H. Laflere, and F. Cardon, “On the Relationship between the Surface Composition of the Substrate and the Schottky Barrier Height in Au/n‐CdTe Contacts,” J. Appl. Phys., vol. 70, no. 4, pp. 2200, May 1991, doi: 10.1063/1.349458.
Year 2023, Volume: 1 Issue: 1, 1 - 10, 30.05.2023

Abstract

References

  • A. Gukasyan, A. Kvit, and Y. Klevkov, “High-Resolution PL Characterization of Impurity Segregation and Their Complex Formation on Extended Defects in CdTe,” Solid State Com., vol. 97, no. 10, pp. 897–902, Mar. 1996, doi: 10.1016/0038-1098(95)00417-3.
  • S. Lalitha, S. Zh. Karazhanov, P. Ravindran, and S. Senthilarasu, “Electronic Structure, Structural and Optical Properties of Thermally Evaporated CdTe Thin Films,” Physica B., vol. 387, no. 1–2, pp. 227–238, Jan. 2007, doi: 10.1016/j.physb.2006.04.008.
  • A. Castaldini, A. Cavallini, B. Fraboni, L. Polenta, P. Fernandez, and J. Piqueras, “Compensation and Deep Levels in II–VI Compounds,” Mater. Sci. Eng. B., vol. 42, no.1–3, pp. 302–305, Dec. 1996, doi: 10.1016/S0921-5107(96)01726-6.
  • X. Yi, O. Lin, X. Zhao, and K. Wong,” The Effect of Surface Preparation on Properties of Cadmium Telluride Thin Film Heterojunctions,” J. Phys. D Appl. Phys., vol. 23, no. 7, pp. 912, July 1990, doi: 10.1088/0022-3727/23/7/025.
  • K. Guergouri, M. S. Ferah, R. Triboulet, and Y. Marfaing, “Study of the Crystalline Quality of CdTe, CdZnTe and CdMnTe Substrates Used for Liquid Phase Epitaxy of Cd0.7Hg0.3Te,” J. Cryst. Growth, vol. 139, no. 1–2, pp. 6–14, May 1994, doi: 10.1016/0022-0248(94)90022-1.
  • A. Romeo, G. Khrypunov, S. Galassini, H. Zogg, and A. N. Tiwari, “Bifacial Configurations for CdTe Solar Cells,” Solar Energy Mater. Solar Cells, vol. 91, no. 15–16, pp. 1388–1391, Sep. 2007, doi: 10.1016/j.solmat.2007.03.010.
  • Z. R. Khan, M. Zulfequar, and M. S. Khan, “Structural, Optical, Otoluminescence, Dielectric and Electrical Studies of Vacuum-Evaporated CdTe Thin Films,” Bull. Mater. Sci., vol. 35, no. 2, pp. 169–174, Apr. 2012, doi: 10.1007/s12034-012-0274-x.
  • H. Kanbur, Ş. Altindal, T. Mammadov, and Y. Şafak, “Effects of Illumination on I-V, C-V and G/ω –V Characteristics of Au/n-CdTe Schottky Barrier Diodes,” J. Optoelectron. Adv. M., vol. 13, no. 6, pp. 713–718, June 2011.
  • M. S. Han, T. W. Kang, J. H. Leem, M. H. Lee, K. J. Kim, and T. W. Kim, “Strain Effects in CdTe/Si Heterostructures,” J. Appl. Phys., vol. 82, no. pp. 6012, June 1998, doi: 10.1063/1.366467.
  • S. Surabhi, K. Anurag, and S. R. Kumar, “Effect of Annealing on the Structural, Compositional and Optical Properties of CdTe Films,” Mater. Today: Proc., vol. 45, no. 6, pp. 4477–4482, Feb. 2021, doi: 10.1016/j.matpr.2020.12.988.
  • H. Tatsuoka, H. Kuwabara, Y. Nakanishi, and H. Fujiyasu, “CdTe(111) Growth on Misoriented Si(100) Substrates by Hot-Wall Epitaxy,” J. Cryst. Growth, vol. 129, no. 3–4, pp. 686–690, Apr. 1993, doi: 10.1016/0022-0248(93)90504-P.
  • H. Hernández-Contreras, G. Contreras-Puente, J. Aguilar-Hernández, A. Morales-Acevedo, J. Vidal-Larramendi, and O. Vigil-Galán, “CdS and CdTe Large Area Thin Films Processed by Radio-Frequency Planar-Magnetron Sputtering,” Thin Solid Films, vol. 403, no. 404, pp.148–152, Feb. 2002, doi: 10.1016/S0040-6090(01)01523-1.
  • A. U. Ubale, R. J. Dhokne, P. S. Chikhlikar, V. S. Sangawar, and D. K. Kulkarni, “Characterization of Nanocrystalline Cadmium Telluride Thin Films Grown by Successive Ionic Layer Adsorption and Reaction (SILAR) Method,” Bull. Mater. Sci., vol. 29, pp.165–168, Apr. 2006, doi: 10.1007/BF02704610.
  • H. Nishino and Y. Nishijima, “CdTe(111)B/Si(100) Structure Grown by Metalorganic Vapor Phase Epitaxy with Te Adsorption and Annealing,” J. Cryst. Growth, vol. 167, no. 3–4, pp. 488–494, Oct. 1996, doi: 10.1016/0022-0248(96)00288-6.
  • S. Deivanayaki, P. Jayamurugan, R. Mariappan, and V. Ponnuswamy, “Optical and Structural Characterization of CdTe Thin Films by Chemical Bath Deposition Technique,” Chalcogenide Lett., vol. 7, no.3, pp. 159–163, Mar. 2010.
  • N. A. Khan, K. S. Rahman, K. A. Aris, A. M. Ali, Halina Misran, M. Akhtaruzzaman, S. K. Tiong and N. Amin, “Effect of Laser Annealing on Thermally Evaporated CdTe Thin Films for Photovoltaic Absorber Application,” Sol. Energy, vol. 173, pp. 1051–1057, Oct. 2018, doi: 10.1016/j.solener.2018.08.023.
  • S. Singh, R. Kumar, and K. N. Sood, “Structural and Electrical Studies of Thermally Evaporated Nanostructured CdTe Thin Films,” Thin Solid Films, vol. 519, no. 3, pp. 1078–1081, Nov. 2010, doi: 10.1016/j.tsf.2010.08.047.
  • J. M. Kestner, S. McElvain, S. Kelly, T. R. Ohno, L.M. Woods, and C. A. Wolden, “An Experimental and Modeling Analysis of Vapor Transport Deposition of Cadmium Telluride,” Sol. Energy Mater. Sol. Cells, vol. 83, no.1, pp. 55–65, June 2004, doi: 10.1016/j.solmat.2004.02.013.
  • B. Barış, “Frequency Dependent Dielectric Properties in Schottky Diodes Based on Rubrene Organic Semiconductor,” Phys. E: Low-Dimens. Syst. Nanostructures, vol. 54, pp. 171–176, Dec. 2013, doi: 10.1016/j.physe.2013.06.018.
  • D. K. Dhruv, S. D. Dhruv, N. Agrawal, and P. B. Patel, “Fabrication and Transport Properties of Thermally Evaporated Cadmium Selenide Thin Films for Photovoltaic Applications,” Mater. Today: Proc., vol. 55, no. 1, pp. 67–72, Feb. 2022, doi: 10.1016/j.matpr.2021.12.173.
  • S. S. Shaikh, Mohd Shkir, and E. U. Masumdar, “Exploration of the Spray Deposited Cadmium Telluride Thin Films for Optoelectronic Devices,” Phys. B: Condens. Matter, vol. 580, pp. 411831, Mar. 2020, doi: 10.1016/j.physb.2019.411831.
  • S. M. Sze, Physics of Semiconductor Devices, 2nd Edition. John Wiley & Sons, New York, 1981.
  • E. H. Rhoderick, and R. H. Williams, Metal–Semiconductor Contacts, 2nd Edition. Clarendon Press, Oxford, 1988.
  • H. Kanbur, Ş. Altındal, and A. Tataroğlu, “The Effect of Interface States, Excess Capacitance and Series Resistance in the Al/SiO2/p-Si Schottky Diodes,” Appl. Surf. Sci., vol. 252, no. 5, pp. 1732–1738, Dec. 2005, doi: 10.1016/j.apsusc.2005.03.122.
  • Ş. Altındal, İ. Dökme, M. M. Bülbül, N. Yalçın, and T. Serin, “The Role of the Interface Insulator Layer and Interface States on the Current-Transport Mechanism of Schottky Diodes in Wide Temperature Range,” Microelektron. Eng., vol. 83, no.3, pp. 499–505, Mar. 2006, doi: 10.1016/j.mee.2005.11.014.
  • P. Chattopadhyay, and B. Raychaudhuri, “Frequency Dependence of Forward Capacitance-Voltage Characteristics of Schottky Barrier Diodes,” Solid State Electron., vol. 35, no. 4, pp. 605–610, Apr. 1993, doi: 10.1016/0038-1101(93)90272-R.
  • I. M. Dharmadasa, G. G. Roberts, and M. C. Petty, “Electrical Properties of Au/n-CdTe Schottky Diodes,” J. Phys. D. Appl. Phys., vol. 15, no. 5, pp. 901, Nov. 1982, doi: 10.1088/0022-3727/15/5/018.
  • S. Gurumurthy, H. L. Bhat, and V. Kumar, “Excellent Rectifying Characteristics in Au/n-CdTe Diodes Upon Exposure to Rf Nitrogen Plasma,” Semicond. Sci. Technol., vol. 14, no. 10, pp. 909, June 1999, doi: 10.1088/0268-1242/14/10/306.
  • R. L. Van Meirhaeghe, R. Van de Walle, W. H. Laflere, and F. Cardon, “On the Relationship between the Surface Composition of the Substrate and the Schottky Barrier Height in Au/n‐CdTe Contacts,” J. Appl. Phys., vol. 70, no. 4, pp. 2200, May 1991, doi: 10.1063/1.349458.
There are 29 citations in total.

Details

Primary Language English
Subjects Condensed Matter Physics
Journal Section Research Articles
Authors

Hatice Kanbur Çavuş 0000-0001-8525-0313

Murat Çavuş 0000-0002-2341-6485

Caner İldeş This is me 0000-0003-3168-935X

Selva Büyükakkaş 0000-0003-2967-1521

Recep Şahingöz 0000-0002-9525-8068

Publication Date May 30, 2023
Submission Date February 28, 2023
Published in Issue Year 2023 Volume: 1 Issue: 1

Cite

IEEE H. Kanbur Çavuş, M. Çavuş, C. İldeş, S. Büyükakkaş, and R. Şahingöz, “Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes”, Bozok J. Sci., vol. 1, no. 1, pp. 1–10, 2023.