Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies

Year 2019, Volume: 15 Issue: 2, 139 - 143, 30.06.2019

Berk Morkoc Ayşegül Kahraman , Aliekber Aktag , Ercan Yılmaz

https://doi.org/10.18466/cbayarfbe.460022

Cited By: 6

Abstract

Electrical parameters of Erbium Oxide (Er₂O₃)
MOS capacitors depending on frequency were investigated deeply, in this paper.
Er₂O₃ layers were deposited on p–Si substrates with (100)
oriented using RF–magnetron sputtering method. The films were annealed at 500 ^oC
in N₂ environment. C–V characteristic changes reduce with increasing
frequency. G/ω–V characteristic variations show different behavior between
10–250 kHz and 250 kHz–1 MHz. It is thought that these different behaviors are
caused by interface states between silicon and Er₂O₃
layer, series resistance (R_s) effects and the relaxation time of
trapped states. The R_s values calculated by the C_ma and G_ma
values at the high frequency and decrease with rising frequency. Then, C_c­­–V
and G_c/ω–V characteristic curves were measured and compared to first
measurements. In addition, interface state density (D_it), diffusion
potential (V_D), and barrier height (_B) were calculated and these results demonstrate
similar behaviors.

Keywords

Er2O3, MOS, Capacitor, Interface states, Series resistance

References

• 1. Kahraman, A, Yilmaz, E, Aktag, A, Kaya, S. 2016. Evaluation of Radiation Sensor Aspects of Er2O3 MOS Capacitors under Zero Gate Bias. IEEE Transactions on Nuclear Science; 63(2): 1284–1293.
• 2. Laha, A, Osten, H.J, Fissel, A. 2007. Influence of Interface Layer Composition on the Electrical Properties of Epitaxial Gd2O3 Thin Films for High-K Application. Applied Physics Letters; 90: 113508-1-3.
• 3. Kaya, S, Yilmaz, E. 2018. Modifications of Structural, Chemical, and Electrical Characteristics of Er2O3/Si Interface under Co-60 Gamma Irradiation. Nuclear Instruments & Methods in Physics Research B; 418: 74–79.
• 4. Kitai, S, Maida, O, Kanashima, T, Okuyama, M. 2003. Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition. Japanese Journal of Applied Physics Part 1; 42: 247–253.
• 5. Pampillon, M.A, Feijoo, P.C, San Andres, E. 2013. High Permittivity Gadolinium Oxide Deposited on Indium Phosphide by High-Pressure Sputtering without Interface Treatments. Microelectronic Engineering; 109: 236–239.
• 6. Kao, C-H, Chen, H, Pan, Y.T, Chiu, J.S, Luc, T-C. 2012. The Characteristics of the High-K Er2O3 Dielectrics Deposited on Polycrystalline Silicon. Solid State Communications; 152: 504–508.
• 7. Mao, W, Fujita, M. 2015. Growth of Single-Phase Nanostructured Er2O3 Thin Films on Si (100) by Ion Beam Sputter Deposition. Surface & Coatings Technology; 283: 241–246.
• 8. Kaya, S, Lok, R, Aktag, A, Seidel, J, Yilmaz, E. 2014. Frequency Dependent Electrical Characteristics of BiFeO3 MOS Capacitors. Journal of Alloys and Compounds; 583: 476–480.
• 9. Fleetwood, D.M. 1996. Fast and Slow Border Traps in MOS Devices. IEEE Transactions on Nuclear Science; 43: 779–786.
• 10. Inoue, M, Shimada, A, Shirafuji, J. 1996. Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors. Japanese Journal of Applied Physics Part 1; 35(12A): 5921–5924.
• 11. Ravotti, F, Glaser, M, Rosenfeld, A.B, Lerch, M.L.E, Holmes-Siedle, A.G, Sarrabayrouse, G. 2007. Response of RadFET Dosimeters to High Fluencies of Fast Neutrons. IEEE Transactions on Nuclear Science; 54: 1170–1177.
• 12. Kahraman, A, Yilmaz, E, Kaya, S, Aktag, A. 2015. Effects of Post Deposition Annealing, Interface States and Series Resistance on Electrical Characteristics of HfO2 MOS Capacitors. Journal of Materials Science-Materials in Electronics; 26(11): 8277-8284.
• 13. Xiao, H, Huang, S.H. 2010. Frequency and Voltage Dependency of Interface States and Series Resistance in Al/SiO2/p-Si MOS structure. Materials Science in Semiconductor Processing; 13: 395.
• 14. Tataroglu, A, Al-Ghamdi, A.A, El-Tantawy, F. 2016. Analysis of Interface States of FeO-Al2O3 Spinel Composite Film/p-Si Diode by Conductance Technique. Applied Physics a Materials Science & Processing; 122(3): 1–6.
• 15. Cheung, S.K, Cheung, N.W. 1986. Extraction of Schottky Diode Parameters from Forward Current‐Voltage Characteristics. Applied Physics Letters; 49: 85-87.
• 16. Hill, W.A, Coleman, C.C. 1980. A Single-Frequency Approximation for Interface-State Density Determination. Solid-State Electronics; 23(9): 987–993.
• 17. Tataroglu, A, Altindal, A, Bulbul, M.M. 2005. Temperature and Frequency Dependent Electrical and Dielectric Properties of Al/SiO2/p-Si (MOS) Structure. Microelectronic Engineering; 81(1): 140–149.
• 18. Sze, S.M. Physics of Semiconductor Devices; John Wiley and Sons Press: New Jersey, USA, 1981; pp 815.
• 19. Jaksic, A, Rodgers, K, Gallagher, C, Hughes, P.J. Use of RADFETs for quality assurance of radiation cancer treatments, MIEL 2006-Proceedings, Belgrade, Serbia, 2006, pp 577–579.
• 20. Kim, M.S, Kim, H.T, Chi, S. 2003. Distribution of Interface States in MOS Systems Extracted by the Subthreshold Current in MOSFETs under Optical Illumination. Journal of Korean Physical Society; 43(5): 873–878.