Optical and Structural Properties of MOCVD Grown InxGa1-xAs Epilayers

Year 2017, Volume: 38 Issue: 4, 681 - 689, 08.12.2017

Behcet Ozgur Alaydın Ebru Senadım Tuzemen İlkay Demır Sezai Elagoz

https://doi.org/10.17776/csj.349262

Cited By: 1

Abstract

In_xGa_1-xAs layers on undoped InP (100) substrates
were grown with Aixtron 200-4
RF/S horizontal Metal Organic Chemical Vapour Deposition (MOCVD)
reactor. All the epilayers have
been grown with different indium compositions. Thickness of the samples were measured via Scanning
Electron Microscopy (SEM). Indium concentrations were defined by High
Resolution X-ray Diffraction (HRXRD) and optical measurements were done with
spectroscopic ellipsometry in order to obtain refractive index (n) and
thickness of the samples. In-situ reflectance is used to measure thickness of
samples. Then all of the thicknesses are compared.

Keywords

Metal Organic Chemical Vapour Deposition MOCVD, Ellipsometry, HRXRD, SEM, In-situ Measurement

MOCVD ile Büyütülen InxGa1-xAs Epikatmanların Optik ve Yapısal Özellikleri

Abstract

In_xGa_1-xAs tabakaları katkısız InP (100) alttaş
üzerine Aixtron 200-4 RF/S yatay
Metal Organik Kimyasal Buhar Depolama (MOCVD) sistemi ile büyütülmüştür. Bütün epikatmanlar farklı indiyum
konsantrasyonlarında büyütülmüştür. Katmanların kalınlıkları Taramalı Elektron
Mikroskobu (SEM) ile ölçülmüştür. İndiyum konsantrasyonları Yüksek Çözünürlüklü
X-ışını Kırınım (HRXRD) cihazı ile tayin edildi ve kırılma indisi (n) ve
kalınlıkların belirlenmesi için optiksel ölçümler spektroskopik elipsometre ile
yapıldı. In-situ yansıma, örneklerin kalınlıklarının belirlenmesi için
kullanılmıştır. Son olarak bütün kalınlıklar karşılaştırılmıştır.

Keywords

Metal Organik Kimyasal Buhar Depolama MOCVD, Elipsometre, HRXRD, SEM, In-situ Ölçüm

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