Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Year 2018, Volume: 39 Issue: 3, 728 - 733, 30.09.2018

İlkay Demir

https://doi.org/10.17776/csj.453576

Cited By: 5

Abstract

In this work, MOVPE (Metalorganic Vapor Phase
Epitaxy) growth and characterization studies of high Al content AlGaN epilayers
are reported. We utilize high resolution
X-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques to
analyze the crystalline quality and
surface morphology of AlGaN epilayers. The role of the growth temperature of
AlGaN epilayers on the structural quality and the surface morphology was
investigated. Growth and measurement results show that single phase AlGaN
epilayers were grown on AlN/Al₂O₃ template. It is
concluded that the increasing growth temperature increases the Al content of
AlGaN epilayers which enable to control the alloy concentration of AlGaN.
Furthermore, the increasing Al content in AlGaN epilayers leads to the smooth
surface which indicates that the decreasing number of dislocation density.

Keywords

AlGaN, MOVPE, AlN, Al2O3, X-ray diffraction, Atomic force microscope

AlN/Al2O3 Şablonlar Üzerindeki Yüksek Al İçerikli AlGaN epi-Tabakaların Büyütme Sıcaklığı Bağımlılığı

Abstract

Bu çalışmada, yüksek
Al içerikli AlGaN epi-tabakaların MOVPE (Metalorganik Buhar Fazı Epitaksi)
büyütmesi ve karakterizasyon çalışmaları rapor edilmiştir. AlGaN
epi-tabakaların kristal kalitesi ve yüzey morfolojisi analizi için yüksek
çözünürlüklü X-ışını kırınımı (HRXRD) ve atomik kuvvet mikroskobu teknikleri
kullanılmıştır. Büyütme sıcaklığının AlGaN epi-tabakalarının yapısal kalitesi
ve yüzey morfolojisi üzerindeki rolü incelenmiştir. Büyütme ve ölçüm sonuçları
AlN/Al₂O₃ şablonu üzerine tek fazda AlGaN epi-tabakaların
büyütüldüğünü göstermektedir. Artan büyütme sıcaklığının AlGaN'in Al içeriğini
arttırdığı ve bunun AlGaN alaşım konsantrasyonunu kontrol etmeye olanak
sağladığı sonucuna varılmıştır. Ayrıca, AlGaN epi-tabakalarındaki Al içeriğinin
artışı pürüzsüz yüzeye yol açar  ki bu
dislokasyon yoğunluğunun azaldığını belirtir.

Keywords

AlGaN, MOVPE, AlN, Al2O3, X-ışını kırınımı, Atomik kuvvet mikroskobu

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