Pressure and temperature effects on magnetoelectric band energies in GaAs / InxGa1-xAs cylindrical quantum wires

Year 2020, Volume: 41 Issue: 3, 699 - 705, 30.09.2020

Pınar Başer

https://doi.org/10.17776/csj.747296

Cited By: 1

Abstract

Low-dimensional systems, consisting of GaAs / InGaAs heterostructures, have attracted considerable attention due to their many applications in optoelectronic and microelectronic devices. In the present work, the electron and the heavy-hole ground state energy in an InGaAs/GaAs cylindrical quantum well wires (CQWWs) is investigated with the consideration of geometrical confinement. The ground state energy was calculated as a function of hydrostatic pressure and temperature. Under the constant pressure and at a certain magnetic field value, while the ground state energy of the electron and the hole decreases depending on the temperature, it is observed that the energy increases as the hydrostatic pressure increases under the constant temperature. These calculations are interpreted with graphics.

Keywords

Ground State Energy, GaAs/Ga1-xInxAs Quantum Wire, Hydrostatic pressure

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