Research Article
BibTex RIS Cite

GROWTH OF InSe and InSe:Zn SEMICONDUCTORS BY BRIDGMAN/STOCKBARGER TECHNIQUE and STRUCTURAL CHARACTERIZATIONS

Year 2015, Issue: 2015 Özel Sayısı, 77 - 94, 15.01.2016

Abstract

Rapid
increase in the world population day by day due to the decrease in oil reserves
and climate change, identification of environmentally friendly sources of
energy is emerging as one of the priority issues.  The importance of semiconductors paving the
way for nano and optoelectronic technology has recently been increasing. But,
producing them easily and having their vast application fields are most
important. For that reason, the crystals having wide application field and
their characteristics which are determinated are needed. The characteristics of
these crystals which are important fort the nano and optoelecronic technology
will be explored in detail by analyzing the all obtained results. InSe and
InSe:Zn binary semiconductor compounds were grown in our crystal growth
laboratory by the Bridgman-Stockbarger method. The structural and morphological
characterizations of the samples were carried out by X-ray diffraction (XRD),
Scanning Electron Microscopy (SEM) and Energy-dispersive X-ray spectroscopy
(EDX) techniques. The XRD results indicated that the grown films had hexzagonal
structure and Zn doping
increased the peak intensities.
The lattice parameters were calculated to be a=b=
4.002 Å, c = 17.160 Å for InSe and a=b= 5.845 Å ve c = 16.788 Å for (0012)
InSe:Zn using the XRD results.From the SEM results, it
was observed that the average grain size values
for InSe and InSe:Zn were between
42-155 nm and 50-125 nm, respectively. EDX results showed that In and Se
elements were in weight
57.04%
and 38.46%
in the
structure.

References

  • [1] K. Schubert, E. Dorre ve E. Gunsel, “Kristalchemische Ergebnisse an Phasen aus Elementen”, Naturwissenschaften, 41, 448 (1954).
  • [2] K. Sugaike, “Crystal structure of In-Se alloys”, Mineral J. (Japan), 3, 63 (1957).
  • [3] S.A. Semiletov, “Electron-diffraction determination of the structure of InSe”, Kristallografiya, 3(3), 287–292 (1958).
  • [4] B. Celustka ve S. Popovic, “The synthesis of In5Se6 and In2Se from InSe by zone melting process”, J. Phys. Chem. Solids, 35, 287-289 (1974).
  • [5] A. Likforman, D. Carre, J. Etienne ve B. Bachet, “Crystal structure of indium monoselenide (InSe)”, Acta Crystallographica Section B-Structural Science, 31, 1252-1254 (1975).
  • [6] K.C. Nagpal ve S.Z. Ali, “X-Ray crystallographic study of indium monoselenide”, Indian J. Pure Appl. Phys., 14(6), 434-440 (1976).
  • [7] B. Gürbulak, “Growth and optical properties of Dy doped and undoped n-type InSe single crystal”, Solid State Communications, 109, 665-669 (1999).
  • [8] A. B. Abd El-Moiz, “Optical investigations on InxSe1-x thin films (I)”, Physica B, 191, 293-302 (1993).
  • [9] P. Gnatenko ve I. Zhirko, “Exciton absorption and lüminescence of indium selenide crystals” Phys. Stat. Sol. (B), 142, 595-604 (1987).
  • [10] A. Ateş, M. Kundakçı, A. Astam ve M. Yıldırım, “Annealing and ligth effect on optical and electrical properties of evaporatedindium selenide thin films”, Physica E, 40, 2709-2713 (2008).
  • [11] W. Klemm ve H. U.V. Vogel, Anorg. Allg. Chem, 219, 45-49 (1934).
  • [12] A. Chevy A. Kuhn ve M. S. Martin, “Large InSe monocrystals grown from a non-stoichiometrik melt”, J. Crys. Growth, 38, 118-122 (1977).
  • [13] M. Jouanne, C. Julien ve M. Balkanski, “Polarizatıon Studies of Polar Phonons of InSe”, Physica Status Solidi B-Basic Research, 144, 147-150 (1987).
  • [14] D.H. Mosca, N. Mattoso, C.M. Lepienski, W. Veiga, I. Mazzaro, V.H. Etgens ve M. Eddrief, “Mechanical properties of layered InSe and GaSe single crystals”, Journal of Applied Physıcs, 91 (1), 140-144 (2002).
  • [15] D. Olguin, A. Canterero ve U.K. Syassen, “Effect of Pressure on Structural roperties and Energy Band Gaps γ-InSe”, Phys. Stat. Sol. B, 235(2), 456-463 (2003).
  • [16] J. Camassel, P. Merle, H. Mathieu ve A. Chevy, “Excitonic absorption-edge of indium selenide”, Phys. Rev. B, 17, 4718-4725 (1978).
  • [17] Y. Depeursinge, E. Doni, R. Girlanda, A. Baldereschi ve K. Maschke, “Electronic properties of layer semiconductor InSe”, Solid State Commun, 27(12), 1449-1453 (1978).
  • [18] K. E. Glukhov ve Tovstyuk, N. K. “Elementary energy bands concept, band structure, and peculiarities of bonding in -InSe crystal”, Phys. Status Solidi B, 247(2), 318–324 (2010).
  • [19] B. Gürbulak, M. Yıldırım, A. Ateş, S. Doğan ve Y. K. Yoğurtçu, “Growth and temperature dependence of optical properties of Er doped and undoped n-type InSe”, Jpn. J. Appl. Phys, 38, 5133-5136 (1999).
  • [20] S. Gopal, C. Viswanathan, B. Karunagaran, S.K. Narayandass, D. Mangalaraj ve J. Yi, “Preparation and characterization of electrodeposited indium selenide thin films”, Cryst. Res. Technol., 40 (6), 557-562 (2005).
  • [21] C. Viswanathan, V. Senthilkumar, R. Sriranjini, D. Mangalaraj, S.K. Narayandass ve J. Yi, “Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films”, Cryst. Res. Technol., 40 (7), 658 – 664 (2005).
  • [22] I. Shih, C. H. Champness ve A.V. Shahidi, “Growth by directional freezing of CuInSe2 and diffused homojunctions in bulk material”, Solar Cells, 16(1-4), 27-41 (1986).
  • [23] T. Irie, S. Endo ve S. Kimura, “Electrical-Properties of p-type and n-type CuInSe2 Single-Crystals”, Japanese Journal of Applied Physics 18 (7), 1303-1310 (1979).
  • [24] G.B. Williamson ve R.C. Smallman “III. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum”, Philosophical Magazine, 1(1), 34-36 (1956).
  • [25] Z. Strnad, “Glass-Ceramic Materials”, Glass Science and Technology, 8, 161 (1986).
  • [26] S.M. Souza, C.E.M. Campos, J.C. de Lima, T.A. Grandi ve P.S. Pizani, “Structural, thermal and optical studies of mechanical alloyed Ga40Se60 mixture”, Solid State Communications 139, 70-75 (2006).
  • [27] H.J. Gysling, A.A. Wernberg ve T.N. Blanton, “Molecular Design of Single- Source Precursors for 3-6 Semiconductor Films: Control of Phase and Stoichiometry in InxSey Films Deposited by a Spray MOCVD Process Using Single-Source Reagents”, Chem. Mater., 4, 900-905 (1992).
  • [28] I. H. Choi ve P.Y. Yu, “Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor”, Journal of Applied Physics, 93(8), 4673-4677 (2003).
  • [29] C. Viswanathan, S. Gopal, M. Thamilselvan, K. Premnazeer, D. Mangalaraj, S.K. Narayandass, J. Yi ve D.C. Ingram, “Space charge limited current, variable range hopping and mobility gap in thermally evaporatedamorphous InSe thin films”, Journal of Materials Science: Materials in Electronics, 15, 787-792(2004).
  • [30] A. Hirohata, J.S. Moodera ve G.P. Berera, “Structural and electrical properties of InSe polycrystalline films and diode fabrication”, Thin Solid Films, 510, 247-250 (2006).
  • [31] T. Siciliano, A. Tepore, G. Micocci, A. Genga M. Siciliano ve E. Filippo “Synthesis and characterization of indium monoselenide (InSe) nanowires”, J Mater Sci: Mater Electron, 22, 649–653 (2011a).
  • [32] F.I. Mustafa, S.N. Gupta, S. Goyal ve K. Tripathi, “Effect of indium concentration on the electrical properties of InSe alloy”, Physica B, 405, 4087–4091 (2010).
  • [33] H.K. Park, K. Jang, S. Kim, J.H. Kim ve S.S. Uk, “Phase-Controlled One-Dimensional Shape Evolution of InSe Nanocrystals”, J. AM. CHEM. SOC.,128, 14780-14781 (2006).
  • [34] O.A. Balitskii, R.V. Lutsiv, V.P. Savchyn ve J.M. Stakhira, “Thermal oxidation of cleft surface of InSe single crystal”, Materials Science and Engineering B, 56, 5-10 (1998).
  • [35] T. Fujiwara ve Y. Igasaki, “The effects of pulsing the current in galvanostatic electrodeposition tech nique on the composition and surface morphology of In – Se films”, Journal of Crystal Growth, 178(1997), 321-334 (1996).
  • [36] G.P. Vassilev, B. Daouchi, M.C. Record ve J.C. Tedenac, “Thermodynamic Studies of the In-Se system”, Journal of Alloys and Compounds, 269, 107-115 (1998).
  • [37] B. Kobbi, D. Ouadjaout ve N. Kesri, “Growth and characterization of In-Se films”, Vacuum, 62, 321-324 (2001).
  • [38] G. Gordillo ve C. Calderon, “CIS thin film solar cells with evaporated InSe buffer layers”, Solar Energy Materials & Solar Cells, 77, 163–173 (2003).
  • [39] R. Sreekumar, K.P.M. Ratheesh, K.C. Sudha, K.P. Vijayakumar, D. Kabiraj, S.A. Khan, D.K. Avasthi, “SHI induced single-phase InSe formation at lower annealing temperature”, Nuclear Instruments and Methods in Physics Research B, 244, 190–193 (2006).
  • [40] R. Sreekumar, R. Jayakrishnan, K.C. Sudha, K.P. Vijayakumar ve S.A. Khan, “Enhancement of band gap and photoconductivity in gamma indium selenide due to swift heavy ion irradiation”, Journal of Applied Physics, 103, 023709 (2008).
  • [41] T. Siciliano, A. Tepore, G. Micocci, A. Genga, M. Siciliano ve E. Filippo, “Formation of In2O3 Microrods in Thermal Treated InSe Single Crystal”, Crystal Growth Design, 11, 1924-1929 (2011b).
  • [42] M. Zolfaghari, K. P. Jain, H.S. Mavi, M. Balkanski, C. Julien ve A. Chevy, “Raman investigation of InSe doped with GaS”, Materials Science Enginering: B, 38 (1-2), 161-170 (1996).

InSe ve InSe:Zn YARIİLETKENLERİN BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLMESİ ve YAPISAL KARAKTERİZASYONU

Year 2015, Issue: 2015 Özel Sayısı, 77 - 94, 15.01.2016

Abstract

 Dünya
nüfusunun hızla artması, petrol rezervlerinin gün geçtikçe azalması ve iklim
değişikliklerinden dolayı, çevre dostu enerji kaynaklarının belirlenmesi
öncelikli konulardan birisi olarak ortaya çıkmaktadır.
Bu maksatla, uygulama alanlarının çok olduğu ve karakteristiklerinin tam
olarak belirlendiği yarıiletkenlere ihtiyaç duyulmaktadır. AIIIBVI
yarıiletken kristallerin büyütülmesi ve araştırılmasıyla yarıiletken teknolojisinde
büyük ilerlemeler sağlanmıştır. Elde edilen bütün sonuçlar analiz edilerek nano
ve optoelektronik teknolojisi için önemli olan bu kristallerin
karakteristikleri detaylı olarak araştırılmıştır. InSe ve InSe:Zn ikili
yarıiletken bileşikleri, bölümümüz kristal büyütme laboratuvarında,
Bridgman-Stockbarger metodu ile büyütülmüştür. Numunelerin, yapısal ve
morfolojik karakterizasyonları X-ışını kırınımı (XRD), taramalı Elektron
Mikroskobu (SEM) ve Enerji ayrımlı
X-ışını spektroskopisi (EDX) teknikleri kullanılarak
gerçekleştirilmiştir.
XRD sonuçları, büyütülen numunelerin hekzagonal
kristal yapıya sahip olduklarını ve Zn katkılamanın pik şiddetlerini
artırdığını göstermiştir. XRD sonuçları kullanılarak,
örgü  parametreleri InSe için a
=b= 4.002 Å, c = 17.160 Å ve InSe:Zn (0012) için ise a=b=5.845
Å ve c=16,788 Å olarak hesaplanmıştır. SEM sonuçlarından, ortalama
tanecik büyüklüğünün sırasıyla, InSe için 42-155 nm ve InSe:Zn için 50-125 nm
aralığında olduğu bulunmuştur.
EDX sonuçları, In ve Se
elementlerinin ağırlıkça %57.04 ve %38.46 olarak yapıda yer aldığını
göstermiştir. 

References

  • [1] K. Schubert, E. Dorre ve E. Gunsel, “Kristalchemische Ergebnisse an Phasen aus Elementen”, Naturwissenschaften, 41, 448 (1954).
  • [2] K. Sugaike, “Crystal structure of In-Se alloys”, Mineral J. (Japan), 3, 63 (1957).
  • [3] S.A. Semiletov, “Electron-diffraction determination of the structure of InSe”, Kristallografiya, 3(3), 287–292 (1958).
  • [4] B. Celustka ve S. Popovic, “The synthesis of In5Se6 and In2Se from InSe by zone melting process”, J. Phys. Chem. Solids, 35, 287-289 (1974).
  • [5] A. Likforman, D. Carre, J. Etienne ve B. Bachet, “Crystal structure of indium monoselenide (InSe)”, Acta Crystallographica Section B-Structural Science, 31, 1252-1254 (1975).
  • [6] K.C. Nagpal ve S.Z. Ali, “X-Ray crystallographic study of indium monoselenide”, Indian J. Pure Appl. Phys., 14(6), 434-440 (1976).
  • [7] B. Gürbulak, “Growth and optical properties of Dy doped and undoped n-type InSe single crystal”, Solid State Communications, 109, 665-669 (1999).
  • [8] A. B. Abd El-Moiz, “Optical investigations on InxSe1-x thin films (I)”, Physica B, 191, 293-302 (1993).
  • [9] P. Gnatenko ve I. Zhirko, “Exciton absorption and lüminescence of indium selenide crystals” Phys. Stat. Sol. (B), 142, 595-604 (1987).
  • [10] A. Ateş, M. Kundakçı, A. Astam ve M. Yıldırım, “Annealing and ligth effect on optical and electrical properties of evaporatedindium selenide thin films”, Physica E, 40, 2709-2713 (2008).
  • [11] W. Klemm ve H. U.V. Vogel, Anorg. Allg. Chem, 219, 45-49 (1934).
  • [12] A. Chevy A. Kuhn ve M. S. Martin, “Large InSe monocrystals grown from a non-stoichiometrik melt”, J. Crys. Growth, 38, 118-122 (1977).
  • [13] M. Jouanne, C. Julien ve M. Balkanski, “Polarizatıon Studies of Polar Phonons of InSe”, Physica Status Solidi B-Basic Research, 144, 147-150 (1987).
  • [14] D.H. Mosca, N. Mattoso, C.M. Lepienski, W. Veiga, I. Mazzaro, V.H. Etgens ve M. Eddrief, “Mechanical properties of layered InSe and GaSe single crystals”, Journal of Applied Physıcs, 91 (1), 140-144 (2002).
  • [15] D. Olguin, A. Canterero ve U.K. Syassen, “Effect of Pressure on Structural roperties and Energy Band Gaps γ-InSe”, Phys. Stat. Sol. B, 235(2), 456-463 (2003).
  • [16] J. Camassel, P. Merle, H. Mathieu ve A. Chevy, “Excitonic absorption-edge of indium selenide”, Phys. Rev. B, 17, 4718-4725 (1978).
  • [17] Y. Depeursinge, E. Doni, R. Girlanda, A. Baldereschi ve K. Maschke, “Electronic properties of layer semiconductor InSe”, Solid State Commun, 27(12), 1449-1453 (1978).
  • [18] K. E. Glukhov ve Tovstyuk, N. K. “Elementary energy bands concept, band structure, and peculiarities of bonding in -InSe crystal”, Phys. Status Solidi B, 247(2), 318–324 (2010).
  • [19] B. Gürbulak, M. Yıldırım, A. Ateş, S. Doğan ve Y. K. Yoğurtçu, “Growth and temperature dependence of optical properties of Er doped and undoped n-type InSe”, Jpn. J. Appl. Phys, 38, 5133-5136 (1999).
  • [20] S. Gopal, C. Viswanathan, B. Karunagaran, S.K. Narayandass, D. Mangalaraj ve J. Yi, “Preparation and characterization of electrodeposited indium selenide thin films”, Cryst. Res. Technol., 40 (6), 557-562 (2005).
  • [21] C. Viswanathan, V. Senthilkumar, R. Sriranjini, D. Mangalaraj, S.K. Narayandass ve J. Yi, “Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films”, Cryst. Res. Technol., 40 (7), 658 – 664 (2005).
  • [22] I. Shih, C. H. Champness ve A.V. Shahidi, “Growth by directional freezing of CuInSe2 and diffused homojunctions in bulk material”, Solar Cells, 16(1-4), 27-41 (1986).
  • [23] T. Irie, S. Endo ve S. Kimura, “Electrical-Properties of p-type and n-type CuInSe2 Single-Crystals”, Japanese Journal of Applied Physics 18 (7), 1303-1310 (1979).
  • [24] G.B. Williamson ve R.C. Smallman “III. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum”, Philosophical Magazine, 1(1), 34-36 (1956).
  • [25] Z. Strnad, “Glass-Ceramic Materials”, Glass Science and Technology, 8, 161 (1986).
  • [26] S.M. Souza, C.E.M. Campos, J.C. de Lima, T.A. Grandi ve P.S. Pizani, “Structural, thermal and optical studies of mechanical alloyed Ga40Se60 mixture”, Solid State Communications 139, 70-75 (2006).
  • [27] H.J. Gysling, A.A. Wernberg ve T.N. Blanton, “Molecular Design of Single- Source Precursors for 3-6 Semiconductor Films: Control of Phase and Stoichiometry in InxSey Films Deposited by a Spray MOCVD Process Using Single-Source Reagents”, Chem. Mater., 4, 900-905 (1992).
  • [28] I. H. Choi ve P.Y. Yu, “Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor”, Journal of Applied Physics, 93(8), 4673-4677 (2003).
  • [29] C. Viswanathan, S. Gopal, M. Thamilselvan, K. Premnazeer, D. Mangalaraj, S.K. Narayandass, J. Yi ve D.C. Ingram, “Space charge limited current, variable range hopping and mobility gap in thermally evaporatedamorphous InSe thin films”, Journal of Materials Science: Materials in Electronics, 15, 787-792(2004).
  • [30] A. Hirohata, J.S. Moodera ve G.P. Berera, “Structural and electrical properties of InSe polycrystalline films and diode fabrication”, Thin Solid Films, 510, 247-250 (2006).
  • [31] T. Siciliano, A. Tepore, G. Micocci, A. Genga M. Siciliano ve E. Filippo “Synthesis and characterization of indium monoselenide (InSe) nanowires”, J Mater Sci: Mater Electron, 22, 649–653 (2011a).
  • [32] F.I. Mustafa, S.N. Gupta, S. Goyal ve K. Tripathi, “Effect of indium concentration on the electrical properties of InSe alloy”, Physica B, 405, 4087–4091 (2010).
  • [33] H.K. Park, K. Jang, S. Kim, J.H. Kim ve S.S. Uk, “Phase-Controlled One-Dimensional Shape Evolution of InSe Nanocrystals”, J. AM. CHEM. SOC.,128, 14780-14781 (2006).
  • [34] O.A. Balitskii, R.V. Lutsiv, V.P. Savchyn ve J.M. Stakhira, “Thermal oxidation of cleft surface of InSe single crystal”, Materials Science and Engineering B, 56, 5-10 (1998).
  • [35] T. Fujiwara ve Y. Igasaki, “The effects of pulsing the current in galvanostatic electrodeposition tech nique on the composition and surface morphology of In – Se films”, Journal of Crystal Growth, 178(1997), 321-334 (1996).
  • [36] G.P. Vassilev, B. Daouchi, M.C. Record ve J.C. Tedenac, “Thermodynamic Studies of the In-Se system”, Journal of Alloys and Compounds, 269, 107-115 (1998).
  • [37] B. Kobbi, D. Ouadjaout ve N. Kesri, “Growth and characterization of In-Se films”, Vacuum, 62, 321-324 (2001).
  • [38] G. Gordillo ve C. Calderon, “CIS thin film solar cells with evaporated InSe buffer layers”, Solar Energy Materials & Solar Cells, 77, 163–173 (2003).
  • [39] R. Sreekumar, K.P.M. Ratheesh, K.C. Sudha, K.P. Vijayakumar, D. Kabiraj, S.A. Khan, D.K. Avasthi, “SHI induced single-phase InSe formation at lower annealing temperature”, Nuclear Instruments and Methods in Physics Research B, 244, 190–193 (2006).
  • [40] R. Sreekumar, R. Jayakrishnan, K.C. Sudha, K.P. Vijayakumar ve S.A. Khan, “Enhancement of band gap and photoconductivity in gamma indium selenide due to swift heavy ion irradiation”, Journal of Applied Physics, 103, 023709 (2008).
  • [41] T. Siciliano, A. Tepore, G. Micocci, A. Genga, M. Siciliano ve E. Filippo, “Formation of In2O3 Microrods in Thermal Treated InSe Single Crystal”, Crystal Growth Design, 11, 1924-1929 (2011b).
  • [42] M. Zolfaghari, K. P. Jain, H.S. Mavi, M. Balkanski, C. Julien ve A. Chevy, “Raman investigation of InSe doped with GaS”, Materials Science Enginering: B, 38 (1-2), 161-170 (1996).
There are 42 citations in total.

Details

Primary Language Turkish
Subjects Metrology, Applied and Industrial Physics
Journal Section Articles
Authors

Bekir Gürbulak

Songül Duman This is me

Salih Zeki Erzenoğlu This is me

Mehmet Şata This is me

Afsoun Ashkhasi This is me

Mutlu Kundakçı This is me

Muhammet Aksoy This is me

Muhammet Yıldırım This is me

Publication Date January 15, 2016
Published in Issue Year 2015 Issue: 2015 Özel Sayısı

Cite

APA Gürbulak, B., Duman, S., Erzenoğlu, S. Z., Şata, M., et al. (2016). InSe ve InSe:Zn YARIİLETKENLERİN BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLMESİ ve YAPISAL KARAKTERİZASYONU. Journal of Science and Technology of Dumlupınar University(2015 Özel Sayısı), 77-94.

HAZİRAN 2020'den itibaren Journal of Scientific Reports-A adı altında ingilizce olarak yayın hayatına devam edecektir.