MATHEMATICAL MODEL OF THE DEVELOPMENT OF MANUFACTURING DEFECTS IN THE SURFACE LAYER OF SUBSTRATES OF MOEMS’ FUNCTIONAL COMPONENTS

Year 2020, Volume: 21 , 113 - 127, 27.11.2020

İgor Nevlıudov , Murad Omarov , Olena Chala

https://doi.org/10.18038/estubtda.823088

Cited By: 1

Abstract

A mathematical model of the development of manufacturing defects, with the prediction of the random component of the model in the substrates of functional components of MOEMS, which are made of semiconductors, in particular, silicon, are developed in the article.
The main manufacturing defects that arise in the surface layer of the substrates of the MOEMS functional components taking into account the technological processes of their production and dynamic processes were used when developing the model.
The developed mathematical model takes into account the occurrence of a random component of the model with its predictive ability.
The possibility of such control is the basis for the development of the scientific direction of technology and equipment for the production of semiconductors, materials and electronic devices - defect engineering, based on the management and forecasting of defect formation processes.

Keywords

mathematical model, defect, MOEMS, functional components

Supporting Institution

THE PROBLEM SCIENTIFIC – RESEARCH LABORATORY «MICROELECTROMECHANICAL AND MICROOPTOELECTROMECHANICAL SYSTEMS» (PRL MEMS AND MOEMS) Department of Computer-Integrated Technologies, Automation and Mechatronics (CITAM) Head of Department – Igor Nevliudov Scientific director – Razumov-Fryziuk Ievgenii Associate Professor Contacts: room 160-2 [phone] [e-mail] Kharkiv National University of Radio Electronics, Nauky Ave. 14, Kharkiv, 61166, Ukraine

Thanks

Gratitude for assistance in research and testing THE PROBLEM SCIENTIFIC - RESEARCH LABORATORY "MICROELECTROMECHANICAL AND MICROOPTOELECTROMECHANICAL SYSTEMS" (PRL MEMS AND MOEMS) Department of Computer-Integrated Technologies, Automation and Mechatronics (CITAM) Head of Department - Igor Nevliudov Scientific director - Razumov-Fryziuk Ievgenii Associate Professor

References

• [1] Guyon I, Elisseeff A. An introduction to variable and feature selection. J Mach Learn Res 2003; 3: 1157-1182.
• [2] Izadpanahi S, Ozcınar C, Anbarjafari G, Demirel H. Resolution enhancement of video sequences by using discrete wavelet transform and illumination compensation. Turk J Elec Eng & Comp Sci 2012; 20: 1268-1276.
• [3] Sabanskis A, Virbulis J. Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique //Journal of Crystal Growth. – 2019. – Т. 519. – С. 7-13.
• [4] M. Wu and W. Wong, "Numerical Approach to Predict Silicon Wafer Grinding Warpage, 2018 20th International Conference on Electronic Materials and Packaging (EMAP), Clear Water Bay, Hong Kong, 2018, pp. 1-3, doi: 10.1109/EMAP.2018.8660847.
• [5] Filipenko O, Chala O. і Videshyn M. 2017. Технологічні дефекти виробництва кремнієвих підкладок для функціональних відбиваючих поверхонь моемс-перемикачів. Системи управління, навігації та зв’язку. Збірник наукових праць. 2, 42 (Груд 2017), 61-63.
• [6] Невлюдов И. Ш. Проектные решения повышения надежности кремниевых интегральных преобразователей механических величин / И. Ш. Невлюдов, М. А. Омаров, К. Ю. Харенко // Радиотехника : Всеукр. межвед. науч.-техн. сб. – Х. : ХНУРЭ, 2006. – Вып. 147. – С. 119–122.
• [7] Филипенко О. І. Технологічні фактори виробництва, що впливають на якість покриттів дзеркальних поверхонь МОЕМС-перемикачів / О. І. Филипенко, О. О. Чала, М. І. Відешин // Наукові нотатки. - 2017. - Вип. 57. - С. 178-183
• [8] Talla JA. Electronic properties of silicon carbide nanotube with Stone Wales defects under uniaxial pressure: a computational study //Computational Condensed Matter. – 2019. – Т. 19. – С.
• [9] Justo JF. et al. Interatomic potential for silicon defects and disordered phases //Physical review B. – 1998. – Т. 58. – №. 5. – С. 2539.
• [10] Филипенко О.І. Методи контролю структур топології поверхонь матеріалів виробів електронної техніки, МЕМС та МОЕМС / О.І. Филипенко, О.О. Чала, Ю.В. Бондаренко // Технология приборостроения. – 2018. – № 2. – С. 3-7.
• [11] Abdelnaby H, Potirniche GP, Elshabini A, Barlow F, Groothuis SK and Parker,RS. Numerical Simulation of Heat Generation During the Back Grinding Process of Silicon Wafers, 2012 IEEE Workshop on Microelectronics and Electron Devices, Boise, ID, 2012, pp. 1-4, doi: 10.1109/WMED.2012.6202614.
• [12] Wilson M et al., Importance of defect photoionization in silicon-rich SiNx dielectrics for high PID resistance, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), Tampa, FL, 2013, pp. 0218-0222, doi: 10.1109/PVSC.2013.6744134.
• [13] Margutti G et al., Silicon Defects Characterization for Low Temperature Ion Implantation and Spike Anneal Processes, 2014 20th International Conference on Ion Implantation Technology (IIT), Portland, OR, 2014, pp. 1-4, doi: 10.1109/IIT.2014.6940014.
• [14] Seal,S, Budhraja V, Sopori B, Devayajanam S, Basnyat P and Varadan VV. Defect Mapping and Stress Mapping of Crystalline Silicon using Spectroscopic Ellipsometry, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), Tampa, FL, 2013, pp. 0212-0217, doi: 10.1109/PVSC.2013.6744133.
• [15] Zafirovska M, Juhl K and Trupke T. Comparison of Line Scan Luminescence Imaging Techniques for Defect Characterisation in Crystalline Silicon Solar Modules, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Waikoloa Village, HI, 2018, pp. 1364-1369, doi: 10.1109/PVSC.2018.8547434.
• [16] L. J. Duan, H. H. Au, M. Kuan, P. S. Quek and K. S. Pey, A New Mechanism of Poly-silicon Crater Defect Induced from Al Tiny Particle Charging Effect during Water Rinse in Oxide Patterning Process, 2006 IEEE International Integrated Reliability Workshop Final Report, South Lake Tahoe, CA, 2006, pp. 198-200, doi: 10.1109/IRWS.2006.305245.
• [17] Селиванова К. Г. Математическое моделирование электромиографического сигнала / К. Г. Селиванова, О. Г. Аврунин, А. А. Гелетка // Вестник Нац. техн. ун-та "ХПИ" : сб. науч. тр. Темат. вып. : Новые решения в современных технологиях. – Харьков : НТУ "ХПИ". – 2014. – № 36 (1079). – С. 31-39.
• [18] Li Z, Jing X, Jiang F and Zhang W. Modeling and Simulation of Silicon Wafer Backside Grinding Process, 2014 15th International Conference on Electronic Packaging Technology, Chengdu, 2014, pp. 874-877, doi: 10.1109/ICEPT.2014.6922787.
• [19] Sakhnenko NK, Stognii NP, Nerukh AG. Chipouline A., Pertsch T. Modeling of Transient Plasmon Dynamics In Metallic Cylinders // Proc. Int. Conference on Mathematical Method in Electromagnetic Theory (MMET 2012), Kharkiv, Ukraine. – 28 - 30 August 2012. – P. 35 - 38.
• [20] Agarwal R, Samson, S, Kedia S and Bhansali S. Fabrication of Integrated Vertical Mirror Surfaces and Transparent Window for Packaging MEMS Devices, in Journal of Microelectromechanical Systems, vol. 16, no. 1, pp. 122-129, Feb. 2007, doi: 10.1109/JMEMS.2006.886010.
• [21] Fujita T, Nagatani Y and Maenaka K. MEMS Mirror Controlling System with Holed-PSD, 2010 3rd International Conference on Emerging Trends in Engineering and Technology, Goa, 2010, pp. 446-449, doi: 10.1109/ICETET.2010.101.
• [22] Filipenko O, Chala O and Sychova O. Some Issues of Dependencies of Loss from Technological Features of Optical Switches for Communication Systems, 2018 International Scientific-Practical Conference Problems of Infocommunications. Science and Technology (PIC S&T), pp. 599-603, 2018.
• [23] Prashant K, Dhavse R and Mishra V. Dependence of Oxidation Process on Various Oxidizing Conditions, 2014 2nd International Conference on Emerging Technology Trends in Electronics, Communication and Networking, Surat, 2014, pp. 1-4, doi: 10.1109/ET2ECN.2014.7044945.
• [24] Hashim U et al., Comparison of Deal Grove Model Growth Rate with Dry Thermal Oxidation Process for Ultra-Thin Silicon Dioxide Film, 2015 2nd International Conference on Biomedical Engineering (ICoBE), Penang, 2015, pp. 1-4, doi: 10.1109/ICoBE.2015.7235905.
• [25] Ma F et al., Modeling of Stress-Retarded Thermal Oxidation of Nonplanar Silicon Structures for Realization of Nanoscale Devices, in IEEE Electron Device Letters, vol. 31, no. 7, pp. 719-721, July 2010, doi: 10.1109/LED.2010.2047375.
• [26] Agache V, Bigotte P, Legrand B, Senez V, Buchaillot L and Collard D, Modeling and Experimental Validation of Silicon Nanotip Oxidation: Towards A Nanoelectromechanical Filter Application, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664), Boston, MA, USA, 2003, pp. 1287-1290 vol.2, doi: 10.1109/SENSOR.2003.1217008.
• [27] Терлецкий Я. П. Статистическая физика: Учебное пособие. – Высшая школа, 1966. Технология С. Под ред. С. Зи; Пер. с англ., кн. 1. – 1986.
• [28] Рудой Ю. Г., Суханов А. Д. Термодинамические флуктуации в подходах Гиббса и Эйнштейна //Успехи физических наук. – 2000. – Т. 170. – №. 12. – С. 1265-1296.
• [29] Teh, WH. Boning DS and Welsch, RE. Multi-Strata Stealth Dicing Before Grinding for Singulation-Defects Elimination and Die Strength Enhancement: Experiment and Simulation, in IEEE Transactions on Semiconductor Manufacturing, vol. 28, no. 3, pp. 408-423, Aug. 2015, doi: 10.1109/TSM.2015.2438875.
• [30] Smyntyna V, Kulinich O, Glauberman M, Chemeresuk G, Yatsunskiy I and Sviridova O. Influence of Initial Silicon Defects on Processes of the Dioxide Silicon Defect Formation, 2006 16th International Crimean Microwave and Telecommunication Technology, Sevastopol, Crimea, 2006, pp. 608-609, doi: 10.1109/CRMICO.2006.256126.
• [31] Zhu Y, Coletti G and Hameiri Z Injection Dependent Lifetime Spectroscopy for Two-Level Defects in Silicon, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Chicago, IL, USA, 2019, pp. 0829-0832, doi: 10.1109/PVSC40753.2019.8981261.
• [32] Doroshenko VO, Klimova NP, Stognii NP and Kostyn YD. Mathematical Modelling of Impulse Excitation of a Superwideband PEC Cone Antenna, 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL), Sozopol, Bulgaria, 2019, pp. 396-399, doi: 10.1109/CAOL46282.2019.9019509.
• [33] Li D and Su J. Nondestructive Defect Detection and Localization of Defects in Annular Through Silicon Via(TSV), 2019 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC), Taiyuan, China, 2019, pp. 1-3, doi: 10.1109/CSQRWC.2019.8799141.
• [34] Nevli̇udov İ, Omarov M, Botsman İ, Demska N, Nevli̇udova V, Starodubcev M. Research Of Factors Influencing The Process Of Formation Of Welded Microconnections In Electronic Modules. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 2019, 20 () ,181-187. DOI: 10.18038/estubtda.651032.
• [35] Zhang L, Dong Y and Wang J, Wind Speed Forecasting using a Two-Stage Forecasting System With an Error Correcting and Nonlinear Ensemble Strategy, in IEEE Access, vol. 7, pp. 176000-176023, 2019, doi: 10.1109/ACCESS.2019.2957174.
• [36] Wei L, Zhang Z, Ning Y and Lv J. Improved Markov Residual Error to Long-Medium Power Load Forecast Based on SVM Method, 2009 First International Workshop on Education Technology and Computer Science, Wuhan, Hubei, 2009, pp. 128-132, doi: 10.1109/ETCS.2009.38.
• [37] Charan CR. Application of Generalized Neuron Model in Short Term Load Forecasting under error functions, 2010 Second International conference on Computing, Communication and Networking Technologies, Karur, 2010, pp. 1-4, doi: 10.1109/ICCCNT.2010.5591670.