Eskişehir Teknik Üniversitesi Bilim ve Teknoloji Dergisi B - Teorik Bilimler 2667-419X Eskisehir Technical University 10.20290/estubtdb.633238 A COMPREHENSIVE DETERMINING OF CAPACITANCE -VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION A COMPREHENSIVE DETERMINING OF CAPACITANCE -VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION https://orcid.org/0000-0001-8040-8054 Coşkun Fatih Mehmet 08 31 2020 8 2 247 256 10 15 2019 05 21 2020 Copyright © 2010, Eskişehir Teknik Üniversitesi Bilim ve Teknoloji Dergisi B - Teorik Bilimler 2010 Eskişehir Teknik Üniversitesi Bilim ve Teknoloji Dergisi B - Teorik Bilimler

Al-p-Si-Al structures werefabricated and temperature dependent capacitance versus voltage measurementswere performed in this study. The Al contacts were grown by the sputteringmethod and then capacitance-voltage characteristics of the devices wereperformed with forward and reverse biases. According to this measurements, theC-2 vs V plots were conducted. With the help of those calculation,the barrier height vs temperature (ΦCVvs T), the carrier concentration vs temperature (NA vs T) andthe depletion width vs temperature (wvs T) graphs were plotted. Inconclusion, it has been seen that the ΦCVand w decreased, and NA remained constant withincreasing temperature.0000-0001-8040-8054

Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performed in this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of the devices were performed with forward and reverse biases. According to this measurements, the C-2 –V plots were conducted. With the help of those calculation, the barrier height vs temperature (ΦCV – T), the carrier concentration vs temperature (NA – T) and the depletion width vs temperature (w – T) graphs were plotted. In conclusion, it has been seen that the ΦCV and w decreased, and NA almost remained constant with increasing temperature.

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