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Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector

Year 2014, Volume: 4 Issue: 3, 759 - 766, 01.09.2014

Abstract

In this work, a parametric study of a dual junction tandem based on In0.53Ga0.47N on GaAs has been carried. In order to obtain reflection of unabsorbed photons from the bottom of the device, Bragg reflectors (BR) composed of GaAs/AlAs, with appropriate thicknesses, was placed in the rear surface of the GaAs sub-cell. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has been studied. The results of simulation show that the structure’s efficiency can attain 29% under 1-sun AM1.5 illumination, for a front recombination velocity value of 1e3cm/s and 10µm bottom cell thickness. This efficiency will decrease with increasing the operating temperature.

References

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  • X. Shen, S. Lin, F. Li, Y. Wie, S. Zhong, H. Wan, J. Li, “Simulation of the InGaN-based tandem solar cells”, Photovoltaic Cell and Module Technologies II, Edited by Bolko von Roedern, Alan E. Delahoy, Proceedings of Spie, Vol. 7045-E, 2008.
  • K. Nandy, S. Biswas, R. Bhattacharyya, S. N. Saha, A. Deyasi, ”Novel Band-Reject Filter Design Using Multilayer Bragg Mirror at 1550 nm”, Computer Science & Information Technology, ACER 2013, pp. 419-425,2013.
  • I. I. Ivanov, T. V. Nychyporuk, V. A. Skryshevsky, M. Lemiti, “Thin silicon solar cells with SiОх/SiNx Bragg mirror rear surface reflector”, Semiconductor Physics, Quantum Electronics, Optoelectronics, V. 12, N 4, pp. 406-411, 2009.
  • R. H. Sara, M. J. A. de Dood, and H. Kim, “Ultrafast optical response of a high-reflectivity GaAs/AlAs Bragg mirror”, Appl. Phys. Lett, 86, 031109.1-3, 2005.
  • S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, Third Edition, John Wiley, Interscience, 2006.
  • J. Wu and W. Walukiewicz, “Bandgaps of InN and group III nitride alloys”, Super lattice. Microst, 34, pp.63-75, 2003.
  • J. Wu, “When group III-nitrides go infrared: new properties and perspectives”, J. of Appl. Phys., Vol. 106, 011101-1-28, 2009.
  • T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov, G. S. Simin, and M. Asif Khan, “Carrier mobility model for GaN”, Solid-State Electron, 47, pp.111-115, 2003.
  • J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Caser, B. P. Keller, U. K. Mishra and S. P. Den Baars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements”, Appl. Phys. Lett, 71, pp.2572-2574, 1997.
  • M. E. Levinshtein, S. L. Rumyantsev and M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, John Wiley and Sons, Inc. New York, 2001.
  • T. Inushima, M. Higashiwaki and T. Matsui, “Optical properties of Si-doped InN grown on sapphire (0001)”, Phys. Rev., B68: 235204-1-7, 2003.
  • S. N. Mohammad, A. A. Salvador and H. Morkoç, “Emerging Gallium Nitride Based Devices”, Proceedings of the IEEE, Vol. 83(10) , 1995.
  • Ioffe Physico-Technical Institute: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaSb /bandstr.html [15] S. Siegfried, Analysis and simulation of
  • semiconductor devices, Springer-Verlag, 1984.
  • B. O. Seraphin, “Solar energy conversion: Solid- state physics aspects”, Topics in appl. Phys., Vol 31, Springer-Verlag, 1997.
  • J. S. Blakemore, “Semiconducting and other major properties of gallium arsenide”, J. of Appl. Phys., 52(10), pp.123-181, 1982.
  • J. Connie, C. Hasnain, Vertical Cavity Surface Emitting Lasers, Semiconductor Lasers: Past, Present, and Future, American Institute of Physics Press, Woodbury, NY, Aug., 1995.
  • D. E. Palik, Handbook of Optical Constants of Solids, Volumes I, II, and III, Elsevier Science & Tech, 1985.
  • M. Bass, C. DeCusatis, J. Enoch, V. Lakshminarayanan, G. Li, C. MacDonald, V. Mahajan, E. Van Stryland, Handbook of Optics, Optical Properties of Materials, Nonlinear Optics, Quantum Optics, Third Edition, Vol IV, McGraw- Hill, 2009.
  • Z. Z. Bandic, P. M. Bridger, E. C. Piquette, T. C. Mc Gill, “Minority carrier diffusion length and lifetime in GaN”, Appl. Phys. Lett, 72, pp.3166- 3168, 1998.
  • F. Chen, A.N. Cartwright, H. Lu, W. J. Schaff, “Temperature dependence of carrier lifetimes in InN”, Appl. Phys. Lett, 87, 212104-1-3, 2005.
  • T. Takamoto, T. Agui, E. Ikeda and H. Kuri, “High efficiency InGaP/InGaAs tandem solar cells lattice- matched to Ge substrates”, Solar Energy Materials and Solar Cells, 66, pp.511-517, 2001.
  • T. Takamoto, E. Ikeda, H. Kurita and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells”, Appl. Phys. Lett, 70, pp.381-383, 1997.
  • L. Hsu and W. Walukiewicz, “Modelling of InGaN/Si tandem solar cells”, J. of Appl. Phys., 104: 024507, 2008.
Year 2014, Volume: 4 Issue: 3, 759 - 766, 01.09.2014

Abstract

References

  • Q. Rüdiger, Gallium Nitride Electronics, Springer- Verlag, Berlin Heidelberg, 2008.
  • X. Shen, S. Lin, F. Li, Y. Wie, S. Zhong, H. Wan, J. Li, “Simulation of the InGaN-based tandem solar cells”, Photovoltaic Cell and Module Technologies II, Edited by Bolko von Roedern, Alan E. Delahoy, Proceedings of Spie, Vol. 7045-E, 2008.
  • K. Nandy, S. Biswas, R. Bhattacharyya, S. N. Saha, A. Deyasi, ”Novel Band-Reject Filter Design Using Multilayer Bragg Mirror at 1550 nm”, Computer Science & Information Technology, ACER 2013, pp. 419-425,2013.
  • I. I. Ivanov, T. V. Nychyporuk, V. A. Skryshevsky, M. Lemiti, “Thin silicon solar cells with SiОх/SiNx Bragg mirror rear surface reflector”, Semiconductor Physics, Quantum Electronics, Optoelectronics, V. 12, N 4, pp. 406-411, 2009.
  • R. H. Sara, M. J. A. de Dood, and H. Kim, “Ultrafast optical response of a high-reflectivity GaAs/AlAs Bragg mirror”, Appl. Phys. Lett, 86, 031109.1-3, 2005.
  • S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, Third Edition, John Wiley, Interscience, 2006.
  • J. Wu and W. Walukiewicz, “Bandgaps of InN and group III nitride alloys”, Super lattice. Microst, 34, pp.63-75, 2003.
  • J. Wu, “When group III-nitrides go infrared: new properties and perspectives”, J. of Appl. Phys., Vol. 106, 011101-1-28, 2009.
  • T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov, G. S. Simin, and M. Asif Khan, “Carrier mobility model for GaN”, Solid-State Electron, 47, pp.111-115, 2003.
  • J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Caser, B. P. Keller, U. K. Mishra and S. P. Den Baars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements”, Appl. Phys. Lett, 71, pp.2572-2574, 1997.
  • M. E. Levinshtein, S. L. Rumyantsev and M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, John Wiley and Sons, Inc. New York, 2001.
  • T. Inushima, M. Higashiwaki and T. Matsui, “Optical properties of Si-doped InN grown on sapphire (0001)”, Phys. Rev., B68: 235204-1-7, 2003.
  • S. N. Mohammad, A. A. Salvador and H. Morkoç, “Emerging Gallium Nitride Based Devices”, Proceedings of the IEEE, Vol. 83(10) , 1995.
  • Ioffe Physico-Technical Institute: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaSb /bandstr.html [15] S. Siegfried, Analysis and simulation of
  • semiconductor devices, Springer-Verlag, 1984.
  • B. O. Seraphin, “Solar energy conversion: Solid- state physics aspects”, Topics in appl. Phys., Vol 31, Springer-Verlag, 1997.
  • J. S. Blakemore, “Semiconducting and other major properties of gallium arsenide”, J. of Appl. Phys., 52(10), pp.123-181, 1982.
  • J. Connie, C. Hasnain, Vertical Cavity Surface Emitting Lasers, Semiconductor Lasers: Past, Present, and Future, American Institute of Physics Press, Woodbury, NY, Aug., 1995.
  • D. E. Palik, Handbook of Optical Constants of Solids, Volumes I, II, and III, Elsevier Science & Tech, 1985.
  • M. Bass, C. DeCusatis, J. Enoch, V. Lakshminarayanan, G. Li, C. MacDonald, V. Mahajan, E. Van Stryland, Handbook of Optics, Optical Properties of Materials, Nonlinear Optics, Quantum Optics, Third Edition, Vol IV, McGraw- Hill, 2009.
  • Z. Z. Bandic, P. M. Bridger, E. C. Piquette, T. C. Mc Gill, “Minority carrier diffusion length and lifetime in GaN”, Appl. Phys. Lett, 72, pp.3166- 3168, 1998.
  • F. Chen, A.N. Cartwright, H. Lu, W. J. Schaff, “Temperature dependence of carrier lifetimes in InN”, Appl. Phys. Lett, 87, 212104-1-3, 2005.
  • T. Takamoto, T. Agui, E. Ikeda and H. Kuri, “High efficiency InGaP/InGaAs tandem solar cells lattice- matched to Ge substrates”, Solar Energy Materials and Solar Cells, 66, pp.511-517, 2001.
  • T. Takamoto, E. Ikeda, H. Kurita and M. Ohmori, “Over 30% efficient InGaP/GaAs tandem solar cells”, Appl. Phys. Lett, 70, pp.381-383, 1997.
  • L. Hsu and W. Walukiewicz, “Modelling of InGaN/Si tandem solar cells”, J. of Appl. Phys., 104: 024507, 2008.
There are 25 citations in total.

Details

Primary Language English
Journal Section Articles
Authors

Fayçal Bouzid This is me

Nedjedia Benaziez This is me

Publication Date September 1, 2014
Published in Issue Year 2014 Volume: 4 Issue: 3

Cite

APA Bouzid, F., & Benaziez, N. (2014). Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector. International Journal Of Renewable Energy Research, 4(3), 759-766.
AMA Bouzid F, Benaziez N. Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector. International Journal Of Renewable Energy Research. September 2014;4(3):759-766.
Chicago Bouzid, Fayçal, and Nedjedia Benaziez. “Modeling of InGaN/GaAs Photovoltaic Tandem With GaAs/AlAs Bragg Mirror Rear Surface Reflector”. International Journal Of Renewable Energy Research 4, no. 3 (September 2014): 759-66.
EndNote Bouzid F, Benaziez N (September 1, 2014) Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector. International Journal Of Renewable Energy Research 4 3 759–766.
IEEE F. Bouzid and N. Benaziez, “Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector”, International Journal Of Renewable Energy Research, vol. 4, no. 3, pp. 759–766, 2014.
ISNAD Bouzid, Fayçal - Benaziez, Nedjedia. “Modeling of InGaN/GaAs Photovoltaic Tandem With GaAs/AlAs Bragg Mirror Rear Surface Reflector”. International Journal Of Renewable Energy Research 4/3 (September 2014), 759-766.
JAMA Bouzid F, Benaziez N. Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector. International Journal Of Renewable Energy Research. 2014;4:759–766.
MLA Bouzid, Fayçal and Nedjedia Benaziez. “Modeling of InGaN/GaAs Photovoltaic Tandem With GaAs/AlAs Bragg Mirror Rear Surface Reflector”. International Journal Of Renewable Energy Research, vol. 4, no. 3, 2014, pp. 759-66.
Vancouver Bouzid F, Benaziez N. Modeling of InGaN/GaAs Photovoltaic Tandem with GaAs/AlAs Bragg Mirror Rear Surface Reflector. International Journal Of Renewable Energy Research. 2014;4(3):759-66.