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Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based

Year 2012, Volume: 12 Issue: 1, 1453 - 1456, 02.09.2013

Abstract

The present work focuses on the study two sets of films bilayers obtained by Low Pressure Chemical Vapor Deposition (LPCVD), for use as material to MOS gate structures (transistors, chemical sensor ISFET, etc.). The first series of films are composed by two layers, silicon amorphous un-doped layer (poly1) and polysilicon boron doped in situ (poly2). The second series are constituted by boron doped polysilicon (polySi) and nitrogen doped polysilicon (NIDOS). These films (poly1/poly2/SiO2 and polySi/NIDOS/SiO2) are annealed in tem the same conditions of deposit and annealing. The boron concentration is monitored by secondary ion mass spectrometry (SIMS). The superposition between the SIMS profiles of poly1/poly2/SiO2 and polySi/NIDOS/SiO2 films have shown that low thermal annealing budget at 600°C/2h, ensures long boron redistribution to the interface poly2/SiO2. At the contrary, a high thermal budget the second layer (poly2) was recristallyzed and reached to the doped oxide. For polySi/NIDOS films, SIMS profiles confirmed the presence of low nitrogen (X = 1%) which can effectively suppress the boron penetration at the interface NIDOS/SiO2 by the formation of the complex BN detected by FTIR analysis.

References

  • T.Ghani, S.Ahmed, P.Aminzadeh, J.Bielefeld, P.Charvat, C.Chu, M.Harper, P.Jacob,C.Jan, J.Kalieros, C.Kenyon, R.Nagisetty, P.Packan, J.Sebastian, M.Taylor, J. Tsai, S.Tyagi, S.Yang and M.Bohr,"100 nm gate length high performance/low power CMOS transistor structure" IEDM. Tech. Dig. Vol. 19 pp. 415-418, 1999.
  • H. Iwai, "CMOS Technology – Year 2010 and beyond", IEEE Journal of Solid State Circuits, Vol. 34, No. 3, pp. 357-366, 1999.
  • P.M.Solomon, "Device innovation and material challenges at the limits of CMOStechnology", Annu.Rev.Mater.Sci, Vol. 30 pp. 681-697, 2000.
  • K. Shimakura, T. Suzuki and Y. Yadoiwa, "Boron and phosphorus diffusion through an SiO2 layer from a doped polycrystalline Si source under various drive-in ambient" Solid State Electronics, Vol. 18, p. 991, 1975.
  • Y. Sato, K. Ehara and K. Saito, "Enhanced boron diffusion through thin silicon dioxide in a wet oxygen atmosphere" J. Electrochem. Soc., Vol. 136, p.1777, 1989.
  • C.W. Wong and F.S. Lai, "Ambient and dopant effects on boron diffusion in oxides" Appl. Phys. Lett., Vol. 48, p. 1658, 1986.
  • T. Matsuura, J. Murota and M. Mikoshiba, "Diffusion of As, P, and B from doped polysilicon through thin SiO2 films into Si substrates". J. Electrochem. Soc., Vol. 138, pp. 3474-3480, 1991.
  • P. Temple-Boyer, B. de Mauduit, B. caussat and J.P. Couderc. "Correlations between stress and microstructure into LPCVD silicon films". J. Phys. IV France 9, pp. 1107-1114, 1999.
  • E. Sheid, L. Furgal and H. Vergnes. "Boron doped polysilicon deposition in a sector": Specific phenomena and properties" J. Phys. IV France 9, pp.885-892, 1999.
  • R. Mahamdi, L. Saci, F. Mansour, P. Temple-Boyer, E. Scheid and L. Jalabert. "Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modelling "Microelectronics Journal, Vol. 40, pp. 1-4, 2009.
  • R. Mahamdi, L.Saci, F. Mansour, P. Temple-Boyer, E. Scheid and L. Jalabert. "Physicochemical characterization of annealed polySi/NIDOS/SiO2 structures". Spectroscopy Letters .Vol. 42, N°3, pp. 167170, 2009.
  • F. Mansour, R. Mahamdi, L. Jalabert and P. TempleBoyer., "Boron diffusion into Nitrogen Doped Silicon Films for P+ Polysilicon Gate Structures", Thin Solid Films, Vol. 434/1-2pp.152-156, 2003.
  • L.Jalabert, P.Temple Boyer, G. Sarrabayrouse, F.Cristiano, B.Colombeau, F.Voillot and C.Armand, "Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer ", Microelectronics Reliability, Vol. 41, No. 7, pp. 981985, 2001.
  • L.Saci, R. Mahamdi, F. Mansour, J. Boucher, M. Collet, E. B. Pereira and P. Temple-Boyer, "Study of nitrogen effect on boron diffusion during heat treatment in polycrystalline silicon/nitrogen – doped silicon films". Jpn. J. Appl. phys. Vol. 50, pp. 051301, 2011.
Year 2012, Volume: 12 Issue: 1, 1453 - 1456, 02.09.2013

Abstract

References

  • T.Ghani, S.Ahmed, P.Aminzadeh, J.Bielefeld, P.Charvat, C.Chu, M.Harper, P.Jacob,C.Jan, J.Kalieros, C.Kenyon, R.Nagisetty, P.Packan, J.Sebastian, M.Taylor, J. Tsai, S.Tyagi, S.Yang and M.Bohr,"100 nm gate length high performance/low power CMOS transistor structure" IEDM. Tech. Dig. Vol. 19 pp. 415-418, 1999.
  • H. Iwai, "CMOS Technology – Year 2010 and beyond", IEEE Journal of Solid State Circuits, Vol. 34, No. 3, pp. 357-366, 1999.
  • P.M.Solomon, "Device innovation and material challenges at the limits of CMOStechnology", Annu.Rev.Mater.Sci, Vol. 30 pp. 681-697, 2000.
  • K. Shimakura, T. Suzuki and Y. Yadoiwa, "Boron and phosphorus diffusion through an SiO2 layer from a doped polycrystalline Si source under various drive-in ambient" Solid State Electronics, Vol. 18, p. 991, 1975.
  • Y. Sato, K. Ehara and K. Saito, "Enhanced boron diffusion through thin silicon dioxide in a wet oxygen atmosphere" J. Electrochem. Soc., Vol. 136, p.1777, 1989.
  • C.W. Wong and F.S. Lai, "Ambient and dopant effects on boron diffusion in oxides" Appl. Phys. Lett., Vol. 48, p. 1658, 1986.
  • T. Matsuura, J. Murota and M. Mikoshiba, "Diffusion of As, P, and B from doped polysilicon through thin SiO2 films into Si substrates". J. Electrochem. Soc., Vol. 138, pp. 3474-3480, 1991.
  • P. Temple-Boyer, B. de Mauduit, B. caussat and J.P. Couderc. "Correlations between stress and microstructure into LPCVD silicon films". J. Phys. IV France 9, pp. 1107-1114, 1999.
  • E. Sheid, L. Furgal and H. Vergnes. "Boron doped polysilicon deposition in a sector": Specific phenomena and properties" J. Phys. IV France 9, pp.885-892, 1999.
  • R. Mahamdi, L. Saci, F. Mansour, P. Temple-Boyer, E. Scheid and L. Jalabert. "Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modelling "Microelectronics Journal, Vol. 40, pp. 1-4, 2009.
  • R. Mahamdi, L.Saci, F. Mansour, P. Temple-Boyer, E. Scheid and L. Jalabert. "Physicochemical characterization of annealed polySi/NIDOS/SiO2 structures". Spectroscopy Letters .Vol. 42, N°3, pp. 167170, 2009.
  • F. Mansour, R. Mahamdi, L. Jalabert and P. TempleBoyer., "Boron diffusion into Nitrogen Doped Silicon Films for P+ Polysilicon Gate Structures", Thin Solid Films, Vol. 434/1-2pp.152-156, 2003.
  • L.Jalabert, P.Temple Boyer, G. Sarrabayrouse, F.Cristiano, B.Colombeau, F.Voillot and C.Armand, "Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer ", Microelectronics Reliability, Vol. 41, No. 7, pp. 981985, 2001.
  • L.Saci, R. Mahamdi, F. Mansour, J. Boucher, M. Collet, E. B. Pereira and P. Temple-Boyer, "Study of nitrogen effect on boron diffusion during heat treatment in polycrystalline silicon/nitrogen – doped silicon films". Jpn. J. Appl. phys. Vol. 50, pp. 051301, 2011.
There are 14 citations in total.

Details

Primary Language English
Journal Section Articles
Authors

Lynda Sacı

Ramdane Mahamdı This is me

Farida Mansour This is me

Pierre Temple-boyer This is me

Publication Date September 2, 2013
Published in Issue Year 2012 Volume: 12 Issue: 1

Cite

APA Sacı, L., Mahamdı, R., Mansour, F., Temple-boyer, P. (2013). Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based. IU-Journal of Electrical & Electronics Engineering, 12(1), 1453-1456.
AMA Sacı L, Mahamdı R, Mansour F, Temple-boyer P. Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based. IU-Journal of Electrical & Electronics Engineering. September 2013;12(1):1453-1456.
Chicago Sacı, Lynda, Ramdane Mahamdı, Farida Mansour, and Pierre Temple-boyer. “Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based”. IU-Journal of Electrical & Electronics Engineering 12, no. 1 (September 2013): 1453-56.
EndNote Sacı L, Mahamdı R, Mansour F, Temple-boyer P (September 1, 2013) Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based. IU-Journal of Electrical & Electronics Engineering 12 1 1453–1456.
IEEE L. Sacı, R. Mahamdı, F. Mansour, and P. Temple-boyer, “Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based”, IU-Journal of Electrical & Electronics Engineering, vol. 12, no. 1, pp. 1453–1456, 2013.
ISNAD Sacı, Lynda et al. “Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based”. IU-Journal of Electrical & Electronics Engineering 12/1 (September 2013), 1453-1456.
JAMA Sacı L, Mahamdı R, Mansour F, Temple-boyer P. Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based. IU-Journal of Electrical & Electronics Engineering. 2013;12:1453–1456.
MLA Sacı, Lynda et al. “Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based”. IU-Journal of Electrical & Electronics Engineering, vol. 12, no. 1, 2013, pp. 1453-6.
Vancouver Sacı L, Mahamdı R, Mansour F, Temple-boyer P. Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based. IU-Journal of Electrical & Electronics Engineering. 2013;12(1):1453-6.