j. inst. sci. and tech.

Journal of the Institute of Science and Technology

2536-4618

Igdir University

10.21597/jist.428412

Electrical Engineering

Elektrik Mühendisliği

MOSFET Based Parallel Inductance Simulator

MOSFET tabanlı kayıplı Endüktans benzetimi

https://orcid.org/0000-0002-6745-0626

Babacan

Yunus

https://orcid.org/0000-0002-0607-8226

Yesıl

Abdullah

03 01 2019

9 1 30 38 05 29 2018 09 05 2018

2011

Journal of the Institute of Science and Technology

In this paper inductance simulator based on MOSFET-only is presented. Inductance simulator consists of only two MOSFETs and a grounded capacitor in the core structure while the whole structure is made up of only five MOSFETs. It is used MOS-capacitance insteads of external capacitor in the presented inductance simulator. Inductance value can be tuned electronically by changing biasing voltage. Layout is laid by Cadence software and post-layout simulations are given in the paper. Second order voltage mode band-pass filter is given to demonstrate the performance of the proposed inductance simulator. Simulation results are in good agreement with theoretical results.

Bu çalışmada sadece MOSFET’lerden oluşan endüktans benzetimi devresi sunulmuştur. Ana yapı olarak sadece iki transistordan ve bir topraklı kapasiteden meydana gelmiştir. Kutuplanması yapılmış tüm yapı ise sadece beş transistordan oluşmaktadır. Devrede harici kapasite yerine MOS-kapasite kullanılmıştır. Devrenin endüktans değeri elektronik olarak ayarlanmaktadır. Devrenin serimi Cadence programı yardımıyla çizilmiş ve serim sonrası benzetimler makaleye eklenmiştir. Ayrıca sunulan endüktans benzetiminin performansını belirtmek amacıyla ikinci dereceden gerilim-modlu band-geçiren filtre devresi kurulmuştur. Benzetim sonuçları teorik sonuçlar ile uyum içinde olduğu görülmektedir.

MOSFET-C endüktans benzetimi

MOSFET-only inductance simulator

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