The Structural Properties of MoO3 Thin Films Grown by Magnetron Sputtering Technique

Year 2018, Volume: 1 Issue: 1, 52 - 56, 06.08.2018

Beyhan Tatar , Canan Yöney Dilek Demiroğlu

Abstract

The molybdenum trioxide MoO₃ thin films were growth on
c-Si substrates by magnetron sputtering technique. The structural and
morphological properties of MoO₃ thin films were investigated by XRD, RAMAN and SEM
analysis. Prior to annealing process, X-ray diffractogram indicated that MoO₃ thin films vere
amorphous nature. All of the MoO₃ thin films were applied three different annealing
temperature and obtained optimum annealing temperature with 300 ⁰C. XRD patterns of annealed thin films showed that these MoO₃
thin films have polycrystalline nature with 2θ
peak at 12˚,23˚, 25˚, 38˚, 55˚and 58˚ corresponding to the (020), (110), (040), (060), (112) and (081) planes.  RAMAN spectrum of the MoO₃ thin films were
determined 14 Raman active peaks belong to α-phase MoO₃. The surface morphology of the MoO₃ thin films as
deposited has appeared to be uniform with smaller grains and exhibits a coarse
structure. Annealing of the MoO₃ thin films favors growth and
agglomeration of small grains.

Keywords

MoO3 thin films, Metal oxide semiconductors, Surface Properties, Structural Properties

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