Potential practical applications of narrow-gap IV-VI semiconductor compound as infrared radiation sources and detectors, and thermoelectric generators, are the reason for the scientific interest in the mechanism of doping, in the impurity and defect states, and in their dependences on external agencies influencing such semiconductors.
Primary Language | English |
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Journal Section | Research Article |
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Publication Date | June 1, 2002 |
Published in Issue | Year 2002 Volume: 1 Issue: 3 |