saujs

Sakarya University Journal of Science

2147-835X

Sakarya University

10.16984/saufenbilder.279996

Metrology, Applied and Industrial Physics

Metroloji,Uygulamalı ve Endüstriyel Fizik

The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range

Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

Aldemir

Durmuş Ali

SULEYMAN DEMIREL UNIV Kökce

Ali

SULEYMAN DEMIREL UNIV Özdemir

Ahmet Faruk

SULEYMAN DEMIREL UNIV

12 01 2017

21 6 1286 1292 12 21 2016 07 24 2017

1997

Sakarya University Journal of Science

Thecurrent-voltage (I-V) data of Ni/n-GaAs Schottky diodes with 50 nm Schottky metal thickness has beenmeasured in the temperature range of 60 K to 320 K. The important contactparameters of Ni/n-GaAs Schottkydiodes have been obtained by using conventional I-V method, Norde method,generalized Norde method, and Cheung functions for each temperature. Then, theresults have been compared each other.

50 nm Schottky kontak kalınlığına sahip Ni/n-GaAs Schottky diyotlarınınakım-gerilim (I-V) verileri 60 K’den 320 K’e kadar olan geniş bir sıcaklıkaralığında ölçüldü. Ni/n-GaAsSchottky diyotlarının önemli kontak parametreleri geleneksel I-Vmetodu, Norde metodu, genelleştirilmiş Norde metodu ve Cheung fonksiyonlarıkullanılarak her bir sıcaklık değeri için ayrı ayrı elde edildi. Daha sonrasonuçlar birbirleriyle kıyaslandı.

Schottky Diode Conventional I-V Method Cheung Method Norde Method Generalized Norde Method temperature dependence

Schottky Diyot Geleneksel I-V metot Cheung metot Norde Metot Genelleştirilmiş Norde Metot Sıcaklık Bağlılığı

E.H. Rhoderick and R.H. Williams, Metal–Semiconductor Contacts. Oxford : Oxford University Press, 1988.

S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.

H. Norde, "A modified forward I-V plot for Schottky diodes with high series resistance," Journal of Applied Physics, vol. 50, no. 7, pp. 5052-5053, 1979.

K.E Bohlin, "Generalized Norde plot including determination of the ideality factor," Journal of Applied Physics, vol. 60, no. 3, pp. 1223-1224, 1986.

J.H. Werner, "Schottky barrier and pn-junction I/V plots-Small signal evaluation," Applied Physics A, vol. 47, no. 3, pp. 291-300, 1988.

K. Sato and Y. Yasamura, "Study of forward I-V plot for Schottky diodes with high series resistance," Journal of Applied Physics, vol. 58, no. 9, pp. 3655-3657, 1985.

C.D. Lien, F.C.T. So, and M.A. Nicolet, "An improved I-V method for non-ideal Schottky diodes with high series resistance," IEEE Transactions on Electron Devices, vol. ED-31, pp. 1502-1503, 1984.

S.K. Cheung and N.W. Cheung, "Extraction of Schottky diode parameters from forward current-voltage characteristics," Solid-State Electronics, vol. 49, no. 2, pp. 85-87, 1986.

E. Ayyıldız et al., "Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer," Solid-State Electronics, vol. 39, no. 1, pp. 83-87, 1996.

M.K. Hudait and S.B. Krupanidhi, "Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures," Physica B Condensed Matter, vol. 307, no. 1-4, pp. 125-137, 2001.

M.K. Hudait, P. Venkateswarlu, and S.B. Krupanidhi, "Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures," Solid-State Electronics, vol. 45, no. 1, pp. 133-141, 2001.

S. Zhu et al., "Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction, ," Solid-State Electronics, vol. 44, no. 10, pp. 1807-1818, 2000.

D.A. Aldemir, A. Kökce, and A.F. Özdemir, "Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes," Microelectronic Engineering, vol. 98, pp. 6-11, 2012.

Ö. Güllü, M. Çankaya, M. Biber, and A. Türüt, "Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures," Journal of Physics D: Applied Physics, vol. 41, no. 13, p. 135103(7 pp), 2008.