Investigation Of Dielectric Properties For SnO2-PVA/n-Si Schottky Barrier Diode

Year 2024, Issue: 1, 15 - 20, 01.10.2024

Çiğdem Bilkan

https://doi.org/10.46810/tdfd.1411914

Abstract

The dielectric properties of SnO2-PVA nanocomposite films were examined graphically using capacitance (C) and conductivity (G/w) data obtained over a wide frequency and voltage range at room temperature. For SnO2-PVA/n-Si, some dielectric parameters (dielectric constants (ε', ε'') and electrical modulus (real M' and imaginary M'' parts), loss tangent (tan δ) and ac electrical conductivity (σac) frequency and voltage dependence were calculated. As the frequency increased for each applied bias voltage, the ε', ε'' and tan δ values decreased, and it was observed that the changes in these parameters were more effective at low frequencies due to the additional loads on the interface states. While M' increases as the frequency increases due to the short-range mobility of charge carriers and has low values in the low-frequency region. The value of M'' decreases as the frequency increases due to the decrease in polarization and the density of interface states (Nss) effects. While the value of electrical conductivity is almost constant at low frequencies, it increases almost exponentially at high frequencies.

Keywords

Schottky Barrier Diodes, Dielectric properties, Electrical modulus

References

• D. Korucu, A. Turut. Temperature dependence of Schottky diode characteristics prepared with photolithography technique. International Journal of Electronics. 2014; 101:1595-1606.
• Ç. Bilkan, A. Gümüş, Ş. Altındal. The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-Si Schottky barrier diodes (SBDs). Mater Sci Semicon Proc. 2015; 39: 484-491.
• N. F. Mott, E. A. Dawis, Electronic Processes in Non Crystalline Materials, Clarendon Press, Oxford 1971. 437
• A. Kaya, S. Alialy, S. Demirezen, M. Balbaşı, S. A. Yerişkin, A. Aytimur, The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method. Ceramics International. 2016; 42: 3322-3329.
• M. Mümtaz, N. A. Khan. Dielectric properties of Cu0.5Tl0.5Ba2Ca3Cu4O12−δ bulk superconductor. Physica C: Superconductivity and its Applications. 2009; 469: 728-731.
• S. Demirezen. Frequency-and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature. Appl Phys A. 2013; 112: 827-833.
• J. S. Lee, K. H. Choi, H. D. Ghim, S. S. Kim, D. H. Chun, H. Y. Kim, W. S. Lyoo. Role of molecular weight of atactic poly(vinyl alcohol) (PVA) in the structure and properties of PVA nanofabric prepared by electrospinning. J. Appl. Pol. Science. 2004; 93: 1638-1646
• Ç. Bilkan, Y. Azizian-Kalandaragh, Ş. Altındal, R. Shokrani-Havigh. Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co3O4-PVA/p-Si structures. Physica B: Condensed Matter. 2016; 500: 154-160.