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Yıl 2019, Cilt: 3 Sayı: 2, 129 - 135, 31.12.2019

Muhammed Can Özdemir Ömer Sevgili İkram Orak Abdülmecit Türüt

https://doi.org/10.32571/ijct.642886
Cited By: 2

Öz

Kaynakça

  • 1. Hlali, S.; Farji, A.; Hizem, N.; Militaru, L.;. Kalboussi, A.; Souifi, A. J. Alloys Compd. 2017, 713, 194-203.
  • 2. Karabulut, A.; Orak, I.; Turut, A. Int. J. Chem. Technol. 2018, 2 (2), 106-112.
  • 3. Kumar, V.; Kaminski, N.; Maan, A.S.; Akhtar, J. Phys. Status Solidi A. 2016, 213 (1) 193-202.
  • 4. Nicollian, E. H.; Bews, J. R. MOS (Metal Oxide Semiconductor) Physics and Technology, A.Wiley-Interscience Publication, John Wiley & Sons, New York, 1982.
  • 5. Karabulut, A. Bull. Mater. Sci. 2019, 42:5.
  • 6. Altindal, Ş.; Asar, Y. Ş.; Kaya, A.; Sonmez, Z. J. Optoelectron. Adv. Mater. 2012, 14 (11-12), 998-1004.
  • 7. Turut, A.; Yalcin, N.; Saglam, M. Solid State Electron. 1992, 35 (6), 835-841.
  • 8. Bati, B.; Nuhoglu, C.; Saglam, M.; Ayyildiz, E.; Turut, A. Phys. Scripta. 2000, 61, 209-212.
  • 9. Cetinkaya, A. O.; Kaya, S.; Aktag, A.; Budak, E.; Yilmaz, E. Thin Solid Films 2015, 590, 7-12.
  • 10. Cetinkara, H. A, Turut, A., Zengin, D. M.; Erel, S. Appl. Surf. Sci. 2003, 207190-207199.
  • 11. https://en.wikipedia.org/wiki/RCA_clean
  • 12. Sze, S. M. Physics of Semiconductor Devices, 2nd Ed., John Wiley & Sons, Inc. New York, 1981.
  • 13. Hill, W.; Coleman, C. Solid-State Electron. 1980, 23 (9), 1987-1993.
  • 14. Neamen, D. A. Semiconductor Physics and Devices, Irwin, Boston, 1992.
  • 15. Manthrammel , M. A.; Yahia, I. S.; Shkira, M.; AlFaify, S.; Zahran, H. Y.; Ganesh, V.; Yakuphanoglu, F. Solid State Sci. 2019, 93, 7-12.
  • 16. Turut, A.; Karabulut, A.; Ejderha, K.; Bıyıklı, N. Mater. Sci. Semicond. Process. 2015, 39, 400-407.
  • 17. Kim, C. H.; Yaghmazadeh, O.; Tondelier, D.; Jeong, Y. B.; Bonnassieux, Y.; Horowitz, G. J. Appl. Phys. 2011, 109, 083710.

Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer

Yıl 2019, Cilt: 3 Sayı: 2, 129 - 135, 31.12.2019

Muhammed Can Özdemir Ömer Sevgili İkram Orak Abdülmecit Türüt

https://doi.org/10.32571/ijct.642886
Cited By: 2

Öz

Al/p-Si/Al diodes with interfacial native oxide layer were formed.
Their frequency induced admittance-voltage measurements were made. The
frequency-dependent density distribution of interface states has been
determined from the corrected characteristics by considering the series
resistance effect which masks the interface trap loss. The majority carrier
density corresponding to the depletion and inversion parts of the C-2-V curve, was determined 1.82 x 1014
and 4.48 x 1014  cm-3
at 1000 kHz, respectively. The fact that the carrier density obtained from the
inversion part of the plot is higher than that obtained from the depletion part
can be related to the increase in the density of negative space charge in the
depletion region.The value of  was determined as
0.95 eV from the same plot. Interface
state density decreased from 4.31 x 1012 eV-1cm-2
at 100 kHz to 7.30 x 1011 eV-1 cm-2 at 1000
kHz, because the interface charges do not follow the ac signal and do not contribute to capacitance values in high
frequencies.

Anahtar Kelimeler

Metal-semiconductor contacts MIS diodes interface states capacitance characteristics conductance characteristics

Kaynakça

  • 1. Hlali, S.; Farji, A.; Hizem, N.; Militaru, L.;. Kalboussi, A.; Souifi, A. J. Alloys Compd. 2017, 713, 194-203.
  • 2. Karabulut, A.; Orak, I.; Turut, A. Int. J. Chem. Technol. 2018, 2 (2), 106-112.
  • 3. Kumar, V.; Kaminski, N.; Maan, A.S.; Akhtar, J. Phys. Status Solidi A. 2016, 213 (1) 193-202.
  • 4. Nicollian, E. H.; Bews, J. R. MOS (Metal Oxide Semiconductor) Physics and Technology, A.Wiley-Interscience Publication, John Wiley & Sons, New York, 1982.
  • 5. Karabulut, A. Bull. Mater. Sci. 2019, 42:5.
  • 6. Altindal, Ş.; Asar, Y. Ş.; Kaya, A.; Sonmez, Z. J. Optoelectron. Adv. Mater. 2012, 14 (11-12), 998-1004.
  • 7. Turut, A.; Yalcin, N.; Saglam, M. Solid State Electron. 1992, 35 (6), 835-841.
  • 8. Bati, B.; Nuhoglu, C.; Saglam, M.; Ayyildiz, E.; Turut, A. Phys. Scripta. 2000, 61, 209-212.
  • 9. Cetinkaya, A. O.; Kaya, S.; Aktag, A.; Budak, E.; Yilmaz, E. Thin Solid Films 2015, 590, 7-12.
  • 10. Cetinkara, H. A, Turut, A., Zengin, D. M.; Erel, S. Appl. Surf. Sci. 2003, 207190-207199.
  • 11. https://en.wikipedia.org/wiki/RCA_clean
  • 12. Sze, S. M. Physics of Semiconductor Devices, 2nd Ed., John Wiley & Sons, Inc. New York, 1981.
  • 13. Hill, W.; Coleman, C. Solid-State Electron. 1980, 23 (9), 1987-1993.
  • 14. Neamen, D. A. Semiconductor Physics and Devices, Irwin, Boston, 1992.
  • 15. Manthrammel , M. A.; Yahia, I. S.; Shkira, M.; AlFaify, S.; Zahran, H. Y.; Ganesh, V.; Yakuphanoglu, F. Solid State Sci. 2019, 93, 7-12.
  • 16. Turut, A.; Karabulut, A.; Ejderha, K.; Bıyıklı, N. Mater. Sci. Semicond. Process. 2015, 39, 400-407.
  • 17. Kim, C. H.; Yaghmazadeh, O.; Tondelier, D.; Jeong, Y. B.; Bonnassieux, Y.; Horowitz, G. J. Appl. Phys. 2011, 109, 083710.
Toplam 17 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Mühendislik
Bölüm Makale
Yazarlar

Muhammed Can Özdemir 0000-0002-4002-7967

Ömer Sevgili 0000-0003-1740-1444

İkram Orak 0000-0003-2318-9718

Abdülmecit Türüt 0000-0002-4664-4528

Yayımlanma Tarihi 31 Aralık 2019
Yayımlandığı Sayı Yıl 2019 Cilt: 3 Sayı: 2

Kaynak Göster

APA Özdemir, M. C., Sevgili, Ö., Orak, İ., Türüt, A. (2019). Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer. International Journal of Chemistry and Technology, 3(2), 129-135. https://doi.org/10.32571/ijct.642886
AMA Özdemir MC, Sevgili Ö, Orak İ, Türüt A. Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer. Int. J. Chem. Technol. Aralık 2019;3(2):129-135. doi:10.32571/ijct.642886
Chicago Özdemir, Muhammed Can, Ömer Sevgili, İkram Orak, ve Abdülmecit Türüt. “Effect of Measurement Frequency on Admittance Characteristics in Al/P-Si Structures With Interfacial Native Oxide Layer”. International Journal of Chemistry and Technology 3, sy. 2 (Aralık 2019): 129-35. https://doi.org/10.32571/ijct.642886.
EndNote Özdemir MC, Sevgili Ö, Orak İ, Türüt A (01 Aralık 2019) Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer. International Journal of Chemistry and Technology 3 2 129–135.
IEEE M. C. Özdemir, Ö. Sevgili, İ. Orak, ve A. Türüt, “Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer”, Int. J. Chem. Technol., c. 3, sy. 2, ss. 129–135, 2019, doi: 10.32571/ijct.642886.
ISNAD Özdemir, Muhammed Can vd. “Effect of Measurement Frequency on Admittance Characteristics in Al/P-Si Structures With Interfacial Native Oxide Layer”. International Journal of Chemistry and Technology 3/2 (Aralık 2019), 129-135. https://doi.org/10.32571/ijct.642886.
JAMA Özdemir MC, Sevgili Ö, Orak İ, Türüt A. Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer. Int. J. Chem. Technol. 2019;3:129–135.
MLA Özdemir, Muhammed Can vd. “Effect of Measurement Frequency on Admittance Characteristics in Al/P-Si Structures With Interfacial Native Oxide Layer”. International Journal of Chemistry and Technology, c. 3, sy. 2, 2019, ss. 129-35, doi:10.32571/ijct.642886.
Vancouver Özdemir MC, Sevgili Ö, Orak İ, Türüt A. Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer. Int. J. Chem. Technol. 2019;3(2):129-35.

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https://doi.org/10.1063/5.0135129
 Kapak Resmi İndir

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