@article{article_1103864, title={Temperature Dependence of the Optical Characterizations of GaTe Single Crystal}, journal={Journal of Anatolian Physics and Astronomy}, volume={1}, pages={7–12}, year={2021}, author={Gürbulak, Bekir and Şata, Mehmet and Ashkhası, Afsoun and Akça, Burcu and Duman, Songül}, keywords={GaTe, XRD, SEM, EDX, AFM, Soğurma Katsayısı, Band aralığı}, abstract={GaTe binary semiconductor was grown by the modified Bridgman-Stockbarger technique. Absorption measurements, XRD, SEM, EDX and AFM were performed for structural, morphological and optical characterizations of the semiconductor. As a result of the XRD analyses, it was observed that GaTe binary semiconductor had monoclinic structure. To define the effect of annealing temperature on structure, the grown crystal annealed in a nitrogen gas environment at different temperatures in determined periods, after annealing XRD analyses were done. For GaTe semiconductor, atomic weight values that were obtained by the EDX technique and the values that were calculated during growth and applied agreed with each other. The absorption measurements of GaTe binary semiconductor was in the range of 10-320 K and these measures were performed for each 10 K steps. Energy band width and absorption coefficients were determined as a function of temperatures variable for GaTe single semiconductors.}, number={1}, publisher={Atatürk Üniversitesi}