TY  - JOUR
T1  - Memristör taklit devresi kullanılarak yeni bir işlemsel yükselteç modeli ve faz kaydırmalı osilatör devresine uygulanması
TT  - Simulation and experimental investigation of low, middle and high frequency regions of a phase shift oscillator with op-amp redesigned using a memristor
AU  - Parlar, İshak
AU  - Almalı, Mehmet Nuri
PY  - 2024
DA  - May
Y2  - 2023
DO  - 10.17341/gazimmfd.1199645
JF  - Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi
JO  - GUMMFD
PB  - Gazi Üniversitesi
WT  - DergiPark
SN  - 1300-1884
SP  - 1963
EP  - 1972
VL  - 39
IS  - 3
LA  - tr
AB  - Bu çalışmada, geleneksel işlemsel yükselteç (741 ailesi) devre elemanının iç yapısı doğrusal TiO2 sürüklenme hızlı memristör (DTSHM) emulatör modeli ile yeniden tasarlanarak yeni bir op-amp modeli oluşturulmuştur. Önerilen bu op-amp modelinin optimize edilmiş çalışma koşulları ve durumları yeniden belirlendi. RC osilatörlerinden biri olan faz kaydırmalı osilatör (FKO) devresinde yükseltici eleman olarak memristor tabanlı op-amp modeli kullanılmıştır. Önerilen yeni FKO ile salınım başlama zamanı, yerleşme zamanı, hızlı fourier dönüşümü (FFT) analizi ve bunların çıkış parametreleri üzerindeki etkileri hem deneysel hem de simüle edilmiştir. Bu çalışmada önerilen yeni osilatör modeli, sadece orta frekans bölgesinde değil, aynı zamanda düşük ve yüksek frekans bölgelerinde de detaylı olarak değerlendirilmektedir. Ayrıca bu devrelerin verimliliği uygulama devreleri ile entegre edilmiş ve önerilen op-amp modelinin doğruluğu ve uygulanabilirliği teorik olarak kapsamlı bir şekilde çalışılmış ve deneysel ve simülasyon sonuçları ile desteklenmiştir. Son olarak önerilen op-amp modeli ile gerçekleştirilen osilatör devrelerinin hem simülasyonu hem de deneysel sonuçları tablolar halinde detaylı olarak sunulmuştur.
KW  - İşlemsel yükselteç
KW  - DTSHM taklit devresi modeli
KW  - Faz kaydırmalı osilatör (FKO)
KW  - Hızlı fourier dönüşümü (HFD)
KW  - Frekans bölgeleri
N2  - In this paper, a novel operational amplifier (op-amp) model was created by redesigning the internal structure of traditional op-amp (ua741 family) circuit element with the linear dopant drift TiO2 memristor (LDDTM) emulator model. The optimized operating conditions and states of this novel op-amp model were determined. The memristor based op-amp model was used as an amplifier element in the phase shift oscillator (PSO) circuit which is one of the RC oscillators. With the novel new phase shift oscillator, the oscillation settling time, start time, fast fourier transform (FFT) analysis and their effects on the output parameters are investigated both experimentally and simulated. The new oscillator model novel in this study is evaluated in detail not only in the middle frequency region, but also in the high and low frequency regions. In addition, the efficiency of these circuits has been merged with the experimental circuits, and the accuracy and practicality of the novel op-amp model has been comprehensively studied theoretically and supported by simulation and experimental results. Finally, both experimental and simulation results of the oscillator circuits realized with the novel op-amp model are shown in detail in tables.
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UR  - https://doi.org/10.17341/gazimmfd.1199645
L1  - https://dergipark.org.tr/tr/download/article-file/2752205
ER  -