TY - JOUR T1 - Effect of Annealing on Electronic Transport in Modulation-doped In0.32Ga0.68As/GaAs Quantum Well Structures AU - Aydın, Mustafa AU - Rajhi, Adal AU - Dönmez, Ömer AU - Sarcan, Fahrettin AU - Erol, Ayşe PY - 2024 DA - June DO - 10.26650/PAR.2024.00004 JF - Physics and Astronomy Reports PB - İstanbul Üniversitesi WT - DergiPark SN - 2980-3012 SP - 29 EP - 36 VL - 2 IS - 1 LA - en AB - In this study, electronic transport properties of n-type modulation-doped In0.32Ga0.68As/GaAs quantum well (QW) quasi 2D structures and the effects of post-growth rapid thermal annealing and growth temperature are determined. Electron Hall mobility and carrier concentration of In0.32Ga0.68As/GaAs QW were determined using the Hall effect measurement at a temperature range between 4.2 K and 300 K. While the low-temperature electron mobility has temperature-independent behavior, electron mobility at high-temperatures deteriorates drastically. However, for low-temperature growth samples, electron mobility shows a slight increase at lower temperatures. The effects of annealing and growth temperature on electronic transport properties are investigated and compared in terms of carrier mobility, carried density, effective mass and scattering mechanisms. To determine the dominant scattering mechanisms in the 2D structures of In0.32Ga0.68As/GaAs, temperature-dependent Hall mobility results are fitted using an analytical model, considering all possible scattering mechanisms (interface roughness, alloy disorder, acoustic phonon, polar optical phonon and remote ionized impurity scattering) in the 2D samples. Magnetotransport (MR) measurements were carried out between 4.2 K and 50 K and the effective mass, Fermi level, and 2D carrier density were calculated by analyzing amplitudes of temperature dependence Shubnikov de Haas (SdH) oscillations. Our results indicate that the effects of annealing at 700◦C-600s reduce interface roughness and alloy disorder scattering, thereby enhancing electron mobility. Post-growth thermal annealing improved electron mobility. Also, annealing increases the effect mass and causes a reduction in the electron concentrations of the InGaAs/GaAs QW systems. Additionally, thermal annealing increases the effective electron mass while decreasing electron concentration. KW - In0.32Ga0.68As/GaAs KW - 2D structures KW - modulation doped structures KW - electronic transport CR - Aldridge H., Lind A. G., Bomberger C. C., Puzyrev Y., Zide J. M., Pantelides S. T., Law M. E., Jones K. S., 2017, Materials Science in Semiconductor Processing, 62, 171 google scholar CR - Ardali S., Taganov S., Erol A., Tiras E., 2021, Physica E: Low-Dimensional Systems and Nanostructures, 125, 114344 google scholar CR - Balkan N., Çelik H., Vickers A. J., Cankurtaran M., 1995, Physical Review B, 52, 17210 google scholar CR - Coleridge P. T., 1990, Semiconductor Science and Technology, 5, 961 google scholar CR - Dahl D., 2002, Solid State Communications, 124, 825 google scholar CR - Disseix P., Leymarie J., Vasson A., Monier C., Grandjean N., Leroux M., Massies J., 1997, Physical Review B - Condensed Matter and Materials Physics, 55, 2406 google scholar CR - Donmez O., et al., 2014, Semiconductor Science and Technology, 29 google scholar CR - Donmez O., et al., 2020, Semiconductor Science and Technology, 35, 10 google scholar CR - Donmez O., et al., 2021, Semiconductor Science and Technology, 36, 11 google scholar CR - Feng G., Yoshimoto M., Oe K., Chayahara A., Horino Y., 2005, Japanese Journal of Applied Physics, Part 2: Letters, 44, 3 google scholar CR - Joncour M., Charasse M., Burgeat J., 1985, Journal of Applied Physics, 58, 3373 google scholar CR - Kosogov A. O., et al., 1996, Applied Physics Letters, 69, 3072 google scholar CR - Kuphal E., 1984, Journal of Crystal Growth, 67, 441 google scholar CR - Li W., et al., 2019, Journal of Applied Physics, 125 google scholar CR - Lin A., Doty M. F., Bryant G. W., 2019, Phys. Rev. B, 99, 075308 google scholar CR - Maspero R., Sweeney S. J., Florescu M., 2017, Journal of Physics Condensed Matter, 29, 075001 google scholar CR - Matthews J. W., Blakeslee A., 1974, Journal of Crystal Growth, 27, 118 google scholar CR - Muraki K., Fukatsu S., Shiraki Y., Ito R., 1992, Applied Physics Let-ters, 61, 557 google scholar CR - Petropoulos J. P., Zhong Y., Zide J. M., 2011, Applied Physics Letters, 99 google scholar CR - Toyoshima H., Niwa T., Yamazaki J., Okamoto A., 1993, Applied Physics Letters, 63, 821 google scholar CR - Zanato D., Gokden S., Balkan N., Ridley B. K., Schaff W. J., 2004, Semiconductor Science and Technology, 19, 427 google scholar UR - https://doi.org/10.26650/PAR.2024.00004 L1 - http://dergipark.org.tr/tr/download/article-file/4111870 ER -