TY  - JOUR
TT  - The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device
AU  - Orak, İkram
AU  - Koçyiğit, Adem
PY  - 2017
DA  - October
JF  - Pamukkale Üniversitesi Mühendislik Bilimleri Dergisi
PB  - Pamukkale Üniversitesi
WT  - DergiPark
SN  - 2147-5881
SP  - 536
EP  - 542
VL  - 23
IS  - 5
KW  - Al/Si3N4/p- Si
KW  - Schottky
KW  - Kapasitans özelliği
KW  - MIS
KW  - Kalınlık etkisi
N2  - Metal-insulator-semiconductor(MIS) structures have great interest for their good applications in electronicand optoelectronic. Their importance can be attributed that they have storagelayer property, capacitance effect and high dielectric constant. For thisreason, two samples of Si3N4 layers were deposited withplasma-enhanced chemical vapor deposition (PECVD) technique on p-type Si; firstis about 5 nm thickness and the other is about 50 nm. The thicknesses of Si3N4were adjusted by an ellipsometer. The thickness effect of Si3N4layers on the Al/Si3N4/p type Si contact was studied withthe capacitance-voltage (C–V) and conductance–voltage (G-V) characteristics ofthe contact at the frequency range from 10 kHz to 1 MHz and applied biasvoltage from −5 V to +5 V at room temperature. In each contact having differentinsulator layers, capacitance values decreased and conductance values increasedwith increasing frequencies. The interface states (Nss), theeffect of series resistance (Rs),barrier height (Φb) andcarrier concentration (Na) werefound from the capacitance-voltage (C–V) and conductance–voltage (G-V)measurements and explained in the details. To determine memristor behavior ofthe Al/Si3N4/p type Si contact, dual C-V and G-Vmeasurements were performed at 500 kHz and the room temperature, and theresults were compared for 5 nm and 50 nm thicknesses layers. Consequently,changing of Si3N4 layer thickness influenced properties of the contacts, andthese two contacts have memristor behavior and, they can be used and improvedas memory devices in the future.
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UR  - https://dergipark.org.tr/tr/pub/pajes/issue//345321
L1  - https://dergipark.org.tr/tr/download/article-file/352615
ER  -