TY  - JOUR
T1  - The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
TT  - The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
AU  - Yıldız, Dilber Esra
AU  - Güllü, Hasan Hüseyin
PY  - 2018
DA  - December
DO  - 10.2339/politeknik.389625
JF  - Politeknik Dergisi
PB  - Gazi Üniversitesi
WT  - DergiPark
SN  - 2147-9429
SP  - 919
EP  - 925
VL  - 21
IS  - 4
LA  - en
AB  - SnTe thin film layer was fabricatedby magnetron sputtering technique on n-Si substrate, and the electricalproperties of the In/SnTe/Si/Ag diode structure was investigated by usingtemperature dependent forward bias current-voltage (I-V) measurements. The maindiode parameters were calculated according to the thermionic emission (TE)model and they were found in an abnormal behavior with change in temperate inwhich zero-bias barrier height (                              ) increases and ideality factor ( ) decreases with increasingtemperature. Therefore, the total current flow though the junction wasexpressed by the Gaussian distribution (GD) of barrier height. The plot of   vs   showed the existence of inhomogeneous barrierformation and evidence for the application of Gaussian function to identify thedistribution of low barrier height patches. The mean barrier height was foundas 1.274 with the 0.166 eV standard deviation. From the modified Richardsonplot, Richardson constant was calculated as 119.5A/cm2K2in very close agreement with the reported values. Additionally, the effects ofthe series resistance ( ) were analyzed by using Cheung’sfunction. Distribution of the interface states ( ) were extracted from the I-Vcharacteristics and found in increasing behavior with decreasing temperature. 
KW  - Sputtering technique
KW  - barrier height
KW  - Gaussian distribution
KW  - interface states
N2  - SnTe thin film layer was fabricatedby magnetron sputtering technique on n-Si substrate, and the electricalproperties of the In/SnTe/Si/Ag diode structure was investigated by usingtemperature dependent forward bias current-voltage (I-V) measurements. The maindiode parameters were calculated according to the thermionic emission (TE)model and they were found in an abnormal behavior with change in temperate inwhich zero-bias barrier height (                              ) increases and ideality factor ( ) decreases with increasingtemperature. Therefore, the total current flow though the junction wasexpressed by the Gaussian distribution (GD) of barrier height. The plot of   vs   showed the existence of inhomogeneous barrierformation and evidence for the application of Gaussian function to identify thedistribution of low barrier height patches. The mean barrier height was foundas 1.274 with the 0.166 eV standard deviation. From the modified Richardsonplot, Richardson constant was calculated as 119.5A/cm2K2in very close agreement with the reported values. Additionally, the effects ofthe series resistance ( ) were analyzed by using Cheung’sfunction. Distribution of the interface states ( ) were extracted from the I-Vcharacteristics and found in increasing behavior with decreasing temperature. 
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UR  - https://doi.org/10.2339/politeknik.389625
L1  - https://dergipark.org.tr/tr/download/article-file/418276
ER  -