@article{article_457395, title={A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices}, journal={Balkan Journal of Electrical and Computer Engineering}, volume={7}, pages={15–19}, year={2019}, DOI={10.17694/bajece.457395}, author={Gül, Fatih}, keywords={Memristor,1D1R,Resistive random access memory (RRAM),Circuit model}, abstract={<p> </p> <p class="MsoNormal"> <span lang="en-us" xml:lang="en-us">Memristor-based resistive random access
memory (RRAM) devices are very good competitors for next generation
non-volatile crossbar memory applications. <span>  </span>The sneak paths problem is one of the main constraints in fabricating
crossbar memory devices. The one diode-one resistor (1D1R) structure design is
effective for suppressing the sneak paths problem. Suitable circuit models are
needed to simulate semiconductor structures. </span> </p> <p class="MsoNormal"> <span lang="en-us" xml:lang="en-us">A general circuit model for memristor-based
one diode-one resistor structures is proposed in this work. The Simulation
Program with Integrated Circuit Emphasis (SPICE) environment was used to
simulate the designed circuit. Well-known mathematical models such as those of
Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the
memristor component of the circuit. The current-voltage characteristics were
obtained for different mathematical models. All results were compatible with
the expected characteristics. <span>  </span>The best
fit characteristics were acquired using the Zha and Strukov models. </span> </p> <br /> <span style="font-size:10pt;font-family:’Times New Roman’, serif;" lang="en-us" xml:lang="en-us"> </span>}, number={1}, publisher={MUSA YILMAZ}