TY  - JOUR
T1  - Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature
AU  - Mantarcı, Asim
PY  - 2019
DA  - June
DO  - 10.18466/cbayarfbe.486961
JF  - Celal Bayar University Journal of Science
JO  - CBUJOS
PB  - Manisa Celal Bayar Üniversitesi
WT  - DergiPark
SN  - 1305-130X
SP  - 151
EP  - 160
VL  - 15
IS  - 2
LA  - en
AB  - Indium Gallium Nitride thin film was successfully grown on the substrate using an RF magnetron sputter undercondition of different substrate temperatures. Various experimentalmeasurements were taken to understand effect of substrate temperature on thestructure of thin film and results were analyzed. Grazing mode of XRD resultsconfirmed that thin film has a hexagonal structure with plane for and substratetemperature. It was seen that structural parameters of thin film show a changewith substrate temperature change. Reasons were discussed. Strain and stressvalues in thin film were calculated from experimentalresults and it was found that all thin film has compressive stress.Morphological parameters of thin film were measured by AFM and it wasunderstood that these properties are varied by changing substrate temperature.Also, growth mode of some thin film was found to be layer-plus-island mode(Stranski-Krastanov growth mode), others was found to be layer by layer growthmode (Frank van der Merwe mode). SEM analysis gives that increasing substratetemperature worsened the surface structure of thin film; it is compatible with and supportsXRD results. Compositional values in thin film were found from XPS analysis. Inaddition to our material, carbon and oxygen have also been obtained from XPS results,as expected. Detailed structural and morphological properties of thinfilm have been seen to change by changing substrate temperature and we believethis may play an important role in the production of based optoelectronic devices.
KW  - InGaN
KW  - thin film technology
KW  - RF magnetron sputtering
KW  - substrate temperature
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UR  - https://doi.org/10.18466/cbayarfbe.486961
L1  - https://dergipark.org.tr/tr/download/article-file/747716
ER  -