@article{article_534345, title={Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method}, journal={Journal of the Institute of Science and Technology}, volume={9}, pages={1359–1366}, year={2019}, DOI={10.21597/jist.534345}, author={Erbilen Tanrıkulu, Esra}, keywords={Admitans metodu,Arayüzey durumları,Gevşeme süresi,Al/CdZnO/p-Si (MIS) tip yapılar}, abstract={<p class="MsoNormal" style="margin-bottom:.0001pt;text-align:justify;line-height:200%;">The voltage dependent surface states/traps (Nss) and their relaxation time () of the Al/CdZnO/p-Si (MIS) structure were investigated with admittance method using C-V-f and G/-V-f measurements in the frequency range of 5 kHz-1 MHz. Both the values of C and G/ were found as strong function of voltage and frequency and they increase with decreasing frequency almost for each voltage. The obtained higher values of C and G at the low frequencies are due to the presence of Nss located between CdZnO/p-Si interfaces. At low frequencies, the relaxation time of the charges at the traps is larger than the period (≥T) of the applied ac signal, so they can contribute to the measured C and G/ values. In addition, the presence of Nss causes a peak at the extracted parallel conductance (Gp/) versus Lnf curves of the structure. Thus, both the values of Nss and  were calculated from the peak  <span style="font-size:.9em;">value and its position, respectively. The values of Nss and  ranged from 1.65x1013 eV-1 cm-2, 31.4 s at 1.7 V and 1.39x1013 eV-1 cm-2, 9.18 s at 3 V, respectively. These values are very suitable for these structures at room temperature. </span> </p> <p> </p>}, number={3}, publisher={Iğdır Üniversitesi}