TY  - JOUR
T1  - Investigation of Structural, Optical and Electrical Properties of Al0.3Ga0.7N/GaN HEMT Grown by MOCVD
TT  - Investigation of Structural, Optical and Electrical Properties of Al0.3Ga0.7N/GaN HEMT Grown by MOCVD
AU  - Akpınar, Ömer
AU  - Bilgili, Ahmet Kürşat
AU  - Öztürk, Mustafa Kemal
AU  - Özçelik, Süleyman
AU  - Özbay, Ekmel
PY  - 2020
DA  - September
DO  - 10.2339/politeknik.583898
JF  - Politeknik Dergisi
PB  - Gazi Üniversitesi
WT  - DergiPark
SN  - 2147-9429
SP  - 687
EP  - 696
VL  - 23
IS  - 3
LA  - en
AB  - In this study, Al0.3Ga0.7N/GaNhigh electron mobility transistor (HEMT) structure is investigated grown overc- oriented sapphire substrate by using Metal Organic Chemical Vapor Deposition(MOCVD) method. Optical, morphological and electrical characteristics of thisstructure are determined by X-ray diffraction (XRD), Photoluminecanse (PL),Ultraviolet (UV-Vis.), Atomic Force Microscopy (AFM) and Hall- Resistivitymeasurements. By using XRD method, 2θ, Full Width at Half Maximun (FWHM),lattice parameters, crystallite size, strain, stress and dislocation values arecalculated on symmetric and asymmetric planes. Direct band gap of GaN isdetermined by PL measurements as 3.24 eV. It is seen that conduction of AlGaNlayer starts at 360 nm in UV-Vis. In Hall-Resistivity measurements, it isnoticed that carrier density of HEMT structure is not effected by temperatureand mobility value is high. Carrier density and mobility values are determinedas 5.82x1015 1/cm3 and 1198 cm2/Vs at roomtemperature respectively. At the lowest temperature point (25 K) they arecalculated as 5.19x1015 1/cm3 and 6579 cm2/Vs,respectively.
KW  - HEMT
KW  - XRD
KW  - Strain
KW  - Stress
N2  - In this study, Al0.3Ga0.7N/GaNhigh electron mobility transistor (HEMT) structure is investigated grown overc- oriented sapphire substrate by using Metal Organic Chemical Vapor Deposition(MOCVD) method. Structural, optical, morphological and electricalcharacteristics of this structure are determined by X-ray diffraction (XRD), Photoluminescence (PL), Ultraviolet (UV-Vis.), Atomic Force Microscopy(AFM) and Hall- Resistivity measurements. By using XRD method, 2θ, Full Widthat Half Maximun (FWHM), lattice parameters, crystallite size, strain, stressand dislocation values are calculated on symmetric and asymmetric planes.Direct band gap of GaN is determined by PL measurements as 3.24 eV. It is seenthat conduction of AlGaN layer starts at 360 nm in UV-Vis. In Hall-Resistivitymeasurements, it is noticed that carrier density of HEMT structure is noteffected by temperature and mobility value is high. Carrier density andmobility values are determined as 5.82x1015 1/cm3 and1198 cm2/V.s at room temperature, respectively. At the lowest temperaturepoint (25 K) they are calculated as 5.19x1015 1/cm3 and6579 cm2/Vs, respectively.
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UR  - https://doi.org/10.2339/politeknik.583898
L1  - https://dergipark.org.tr/tr/download/article-file/771895
ER  -